P GND V IN GL C GND VDRV SiC530 www.vishay.com Vishay Siliconix 30 A VRPower Integrated Power Stage DESCRIPTION FEATURES The SiC530 is an integrated power stage solution optimized Thermally enhanced PowerPAK MLP4535-22L for synchronous buck applications to offer high current, high package efficiency, and high power density performance. Packaged Vishays Gen IV MOSFET technology and a in Vishays proprietary 4.5 mm x 3.5 mm MLP package, low-side MOSFET with integrated Schottky SiC530 enables voltage regulator designs to deliver up to diode 30 A continuous current per phase. Delivers up to 30 A continuous current, 40 A at 10 ms peak The internal power MOSFETs utilize Vishays current state-of-the-art Gen IV TrenchFET technology that delivers High efficiency performance industry benchmark performance to significantly reduce High frequency operation up to 2 MHz switching and conduction losses. Power ON reset The SiC530 incorporates an advanced MOSFET gate driver IC that features high current driving capability, adaptive 5 V PWM logic with tri-state and hold-off dead-time control, an integrated bootstrap Schottky diode, Supports PS4 mode light load requirement for IMVP8 with and zero current detect to improve light load efficiency. The low shutdown supply current (5 V, 5 A) driver is also compatible with a wide range of PWM Under voltage lockout for V CIN controllers, supports tri-state PWM, and 5 V PWM logic. Material categorization: for definitions of compliance A user selectable diode emulation mode (ZCD EN ) please see www.vishay.com/doc 99912 function is included to improve the light load performance. The device also supports the PS4 mode to reduce power APPLICATIONS consumption when system operates in standby state. Multi-phase VRDs for CPU, GPU, and memory INTEL IMVP-8 IA / GT core power Up to 18 V rail input DC/DC VR modules TYPICAL APPLICATION DIAGRAM 5V V IN BOOT PHASE V CIN ZCD EN V SWH V OUT Gate PWM driver PWM controller Fig. 1 - SiC530 Typical Application Diagram S15-2523-Rev. B, 02-Nov-15 Document Number: 62940 1 For technical questions, contact: powerictechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiC530 www.vishay.com Vishay Siliconix PINOUT CONFIGURATION 11 10 9 8 7 6 25 V 12 5 PHASE SWH V IN 26 P V 13 GND 4 BOOT SWH V 14 3 N.C. SWH 23 C V 15 GND 2 V SWH CIN 24 V 16 1 ZCD EN SWH GL 17 18 19 20 21 22 Fig. 2 - SiC530 Pin Configuration PIN DESCRIPTION PIN NUMBER NAME FUNCTION 1 ZCD EN ZCD, PS4 control. Active low 2V Supply voltage for internal logic circuitry CIN 23 C Analog ground for the driver IC GND 3 N.C. No connection 4 BOOT High-side driver bootstrap voltage 5 PHASE Return path of high-side gate driver 6 to 8, 25 V Power stage input voltage. Drain of high-side MOSFET IN 9 to 11, 17, 18, 20, 26 P Power ground GND 12 to 16 V Switch node of the power stage SWH 19, 24 GL Low-side gate signal 21 V Supply voltage for internal gate driver DRV 22 PWM PWM control input ORDERING INFORMATION PART NUMBER PACKAGE MARKING CODE SiC530CD-T1-GE3 PowerPAK MLP4535-22L SiC530 5 V PWM optimized SiC530DB Reference board S15-2523-Rev. B, 02-Nov-15 Document Number: 62940 2 For technical questions, contact: powerictechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P P GND GND P P GND GND P GND GL V P IN GND V V IN DRV V PWM IN