X-On Electronics has gained recognition as a prominent supplier of SQ1421EDH-T1_GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQ1421EDH-T1_GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQ1421EDH-T1_GE3 Vishay

SQ1421EDH-T1_GE3 electronic component of Vishay
SQ1421EDH-T1_GE3 Vishay
SQ1421EDH-T1_GE3 MOSFETs
SQ1421EDH-T1_GE3  Semiconductors

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See Product Specifications
Part No. SQ1421EDH-T1_GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 60V (D-S) -/+20V AEC-Q101 Qualified
Datasheet: SQ1421EDH-T1_GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
878: USD 0.1119 ea
Line Total: USD 98.25 
Availability - 1455
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ: 878  Multiples: 1
Pack Size: 1
Availability Price Quantity
307394
Ship by Tue. 04 Mar to Thu. 06 Mar
MOQ : 1
Multiples : 1
1 : USD 0.4325
10 : USD 0.3462
100 : USD 0.2576
500 : USD 0.2068
1000 : USD 0.1881
3000 : USD 0.1672
9000 : USD 0.165
24000 : USD 0.1639
45000 : USD 0.1606

2560
Ship by Tue. 04 Mar to Thu. 06 Mar
MOQ : 1
Multiples : 1
1 : USD 0.672
5 : USD 0.448
50 : USD 0.3528
70 : USD 0.252
193 : USD 0.238

2803
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 249
Multiples : 1
249 : USD 0.2613
500 : USD 0.2015
1000 : USD 0.1807
2000 : USD 0.1794

1455
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 878
Multiples : 1
878 : USD 0.1119
1000 : USD 0.1083

967
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 252
Multiples : 1
252 : USD 0.2579
277 : USD 0.235
279 : USD 0.2327
500 : USD 0.2028

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SQ1421EDH-T1_GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQ1421EDH-T1_GE3 and other electronic components in the MOSFETs category and beyond.

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SQ1421EDH www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) MOSFET FEATURES SOT-363 TrenchFET power MOSFET SC-70 Single (6 leads) S AEC-Q101 qualified 4 D 100 % R and UIS tested g 5 D Typical ESD protection: 800 V 6 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3 G 2 D 1 (1, 2, 5, 6) D D Top View Marking Code: 9D (3) G PRODUCT SUMMARY V (V) -60 DS R ( ) at V = -10 V 0.290 DS(on) GS P-Channel MOSFET R ( ) at V = -4.5 V 0.395 DS(on) GS I (A) -1.6 D (4) S Configuration Single Package SC-70 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V -60 DS V Gate-source voltage V 20 GS a T = 25 C -1.6 C Continuous drain current I D T = 125 C -1 C a Continuous source current (diode conduction) I -1.6 A S b Pulsed drain current I -6.7 DM Single pulse avalanche current I -8 AS L = 0.1 mH Single pulse avalanche energy E 3.2 mJ AS T = 25 C 2.7 C b Maximum power dissipation P W D T = 125 C 0.5 C Operating junction and storage temperature range T , T -55 to +150 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-ambient PCB mount R 125 thJA C/W Junction-to-foot (drain) R 45 thJF Notes a. Package limited b. Pulse test pulse width 300 s, duty cycle 2 % c. When mounted on 1 square PCB (FR4 material) S17-1782-Rev. B, 27-Nov-17 Document Number: 68494 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQ1421EDH www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = -250 A -60 - - DS GS D V Gate-source threshold voltage V V = V , I = -250 A -1.5 -2.0 -2.5 GS(th) DS GS D V = 0 V, V = 12 V - - 5 A DS GS Gate-source leakage I GSS V = 0 V, V = 20 V - - 5 mA DS GS V = 0 V V = -60 V - - -1 GS DS Zero gate voltage drain current I V = 0 V V = -60 V, T = 125 C - - -50 A DSS GS DS J V = 0 V V = -60 V, T = 150 C - - -150 GS DS J a On-state drain current I V = -10 V V -5 V -5 - - A D(on) GS DS V = -10 V I = -2 A - 0.230 0.290 GS D V = -10 V I = -2 A, T = 125 C - - 0.470 GS D J a Drain-source on-state resistance R DS(on) V = -10 V I = -2 A, T = 150 C - - 0.566 GS D J V = -4.5 V I = -1 A - 0.305 0.395 GS D b Forward transconductance g V = -10 V, I = -1.5 A - 3 - S fs DS D b Dynamic Input capacitance C - 284 355 iss Output capacitance C -3V = 0 V V = -25 V, f = 1 MHz645 pF oss GS DS Reverse transfer capacitance C -2835 rss c Total gate charge Q -3.6 5.4 g c Gate-source charge Q -1V = -4.5 V V = -30 V, I = -1 A.2- nC gs GS DS D c Gate-drain charge Q -1.7- gd Gate resistance R f = 1 MHz 3.1 6.05 9 g c Turn-on delay time t -44 66 d(on) c Rise time t -25 38 r V = -30 V, R = 30 DD L ns c I -1 A, V = -4.5 V, R = 1 Turn-off delay time t -1D GEN g320 d(off) c Fall time t -914 f b Source-Drain Diode Ratings and Characteristics a Pulsed current I -- -6.7 A SM Forward voltage V I = -0.5 A, V = 0 V - -0.8 -1.2 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-1782-Rev. B, 27-Nov-17 Document Number: 68494 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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