VS-ST230C Series www.vishay.com Vishay Semiconductors Phase Control Thyristors (Hockey PUK Version), 410 A FEATURES Center amplifying gate Metal case with ceramic insulator International standard case A-PUK (TO-200AB) Designed and qualified for industrial level Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS A-PUK (TO-200AB) DC motor controls Controlled DC power supplies PRIMARY CHARACTERISTICS AC controllers I 410 A T(AV) 400 V, 800 V, 1200 V, 1400 V, V /V DRM RRM 1600 V, 1800 V, 2000 V V 1.69 V TM I 90 mA GT T -40 C to +125 C J Package A-PUK (TO-200AB) Circuit configuration Single SCR MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS 410 A I T(AV) T 55 C hs 780 A I T(RMS) T 25 C hs 50 Hz 5700 I A TSM 60 Hz 5970 50 Hz 163 2 2 I t kA s 60 Hz 149 V /V 400 to 2000 V DRM RRM t Typical 100 s q T -40 to +125 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V /V , MAXIMUM DRM RRM V , MAXIMUM I /I MAXIMUM RSM DRM RRM, VOLTAGE REPETITIVE PEAK AND OFF-STATE TYPE NUMBER NON-REPETITIVE PEAK VOLTAGE AT T = T MAXIMUM J J CODE VOLTAGE V mA V 04 400 500 08 800 900 12 1200 1300 VS-ST230C..C 14 1400 1500 30 16 1600 1700 18 1800 1900 20 2000 2100 Revision: 27-Sep-17 Document Number: 94398 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-ST230C Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 410 (165) A Maximum average on-state current 180 conduction, half sine wave I T(AV) at heatsink temperature double side (single side) cooled 55 (85) C Maximum RMS on-state current I DC at 25 C heatsink temperature double side cooled 780 T(RMS) t = 10 ms 5700 No voltage reapplied t = 8.3 ms 5970 A Maximum peak, one-cycle I TSM non-repetitive surge current t = 10 ms 4800 100 % V RRM reapplied t = 8.3 ms 5000 Sinusoidal half wave, initial T = T maximum t = 10 ms J J 163 No voltage reapplied t = 8.3 ms 148 2 2 2 Maximum I t for fusing I t kA s t = 10 ms 115 100 % V RRM reapplied t = 8.3 ms 105 2 2 2 Maximum I t for fusing I t t = 0.1 to 10 ms, no voltage reapplied 1630 kA s Low level value of threshold voltage V (16.7 % x x I < I < x I ), T = T maximum 0.92 T(TO)1 T(AV) T(AV) J J V High level value of threshold voltage V (I > x I ), T = T maximum 0.98 T(TO)2 T(AV) J J Low level value of on-state slope resistance r (16.7 % x x I < I < x I ), T = T maximum 0.88 t1 T(AV) T(AV) J J m High level value of on-state slope resistance r (I > x I ), T = T maximum 0.81 t2 T(AV) J J Maximum on-state voltage V I = 880 A, T = T maximum, t = 10 ms sine pulse 1.69 V TM pk J J p Maximum holding current I 600 H T = 25 C, anode supply 12 V resistive load mA J Maximum (typical) latching current I 1000 (300) L SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum non-repetitive rate of rise Gate drive 20 V, 20 , t 1 s r dI/dt 1000 A/s of turned-on current T = T maximum, anode voltage 80 % V J J DRM Gate current 1 A, dI /dt = 1 A/s g Typical delay time t 1.0 d V = 0.67 % V , T = 25 C d DRM J s I = 300 A, T = T maximum, dI/dt = 20 A/s, TM J J Typical turn-off time t 100 q V = 50 V, dV/dt = 20 V/s, gate 0 V 100 , t = 500 s R p BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum critical rate of rise dV/dt T = T maximum linear to 80 % rated V 500 V/s J J DRM of off-state voltage Maximum peak reverse and I , RRM T = T maximum, rated V /V applied 30 mA J J DRM RRM off-state leakage current I DRM Revision: 27-Sep-17 Document Number: 94398 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000