TCET1201, TCET1202, TCET1203, TCET1204 www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output FEATURES High common mode rejection CTR offered in 5 groups Low temperature coefficient of CTR 4 A 1 E Material categorization: for definitions of compliance please se e 2 3 C C www.vishay.com/doc 99912 APPLICATIONS Switch-mode power supplies Line receiver 17197 4 Computer peripheral interface Microprocessor system interface LINKS TO ADDITIONAL RESOURCES Reinforced isolation provides circuit protection against electrical shock (safety class II) Circuits for safe protective separation against electrical Related Documents shock according to safety class II (reinforced isolation): - for appl. class I - IV at mains voltage 300 V DESCRIPTION - for appl. class I - III at mains voltage 600 V The TCET1200 consists of a phototransistor optically according to DIN EN 60747-5-5 (VDE 0884-5) coupled to a gallium arsenide infrared-emitting diode in a 4 pin plastic dual inline package. AGENCY APPROVALS UL1577 cUL1577 DIN EN 60747-5-5 (VDE 0884-5) BSI CQC GB8898-2011 CQC GB4943.1-2011 ORDERING INFORMATION DIP T C E T 12 0 7.62 mm PART NUMBER CTR (%) AGENCY CERTIFIED / PACKAGE 10 mA UL, VDE, BSI, FIMKO 40 to 80 63 to 125 100 to 200 160 to 320 DIP-4 TCET1201 TCET1202 TCET1203 TCET1204 Rev. 1.8, 12-Oct-2020 Document Number: 83501 1 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 TCET1201, TCET1202, TCET1203, TCET1204 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V 6V R Forward current I 60 mA F Forward surge current t 10 s I 1.5 A p FSM Power dissipation P 70 mW diss Junction temperature T 125 C j OUTPUT Collector emitter voltage V 70 V CEO Emitter collector voltage V 7V ECO Collector current I 50 mA C Collector peak current t /T = 0.5, t 10 ms I 100 mA p p CM Power dissipation P 70 mW diss Junction temperature T 125 C j COUPLER Isolation test voltage (RMS) V 5000 V ISO RMS Total power dissipation P 200 mW tot Operating ambient temperature range T -40 to +100 C amb Storage temperature range T -55 to +125 C stg (1) Soldering temperature 2 mm from case, t 10 s T 260 C sld Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability (1) Refer to wave profile for soldering conditions for through hole devices ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I = 50 mA V - 1.25 1.6 V F F Junction capacitance V = 0 V, f = 1 MHz C -50- pF R j OUTPUT Collector emitter voltage I = 1 mA V 70 - - V C CEO Emitter collector voltage I = 100 A V 7- - V E ECO Collector emitter cut-off current V = 20 V, I = 0 A, E = 0 I - 10 100 nA CE F CEO COUPLER Collector emitter saturation voltage I = 10 mA, I = 1 mA V -- 0.3 V F C CEsat V = 5 V, I = 10 mA, CE F Cut-off frequency f - 110 - kHz c R = 100 L Coupling capacitance f = 1 MHz C -0.6 - pF k Note Minimum and maximum values were tested requirements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements Rev. 1.8, 12-Oct-2020 Document Number: 83501 2 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000