TCRT1000, TCRT1010 www.vishay.com Vishay Semiconductors Reflective Optical Sensor with Transistor Output FEATURES TCRT1000 TCRT1010 Package type: leaded Detector type: phototransistor Dimensions (L x W x H in mm): 7 x 4 x 2.5 Peak operating distance: 1 mm Operating range within > 20 % relative collector current: 0.2 mm to 4 mm Typical output current under test: I = 0.5 mA C 21836 Daylight blocking filter Emitter wavelength: 950 nm Lead (Pb)-free soldering released Material categorization: For definitions of compliance AC EC 19155 1 please see www.vishay.com/doc 99912 DESCRIPTION APPLICATIONS The TCRT1000 and TCRT1010 are reflective sensors which Optoelectronic scanning and switching devices i.e., include an infrared emitter and phototransistor in a leaded index sensing, coded disk scanning etc. (optoelectronic package which blocks visible light. encoder assemblies for transmissive sensing). PRODUCT SUMMARY DISTANCE FOR DISTANCE RANGE FOR TYPICAL OUTPUT DAYLIGHT (1) (2) PART NUMBER MAXIMUM CTR RELATIVE I > 20 % CURRENT UNDER TEST BLOCKING FILTER rel out (mm) (mm) (mA) INTEGRATED TCRT1000 1 0.2 to 4 0.5 Yes TCRT1010 1 0.2 to 4 0.5 Yes Notes (1) CTR: current transfere ratio, I /I out in (2) Conditions like in table basic charactristics/sensor ORDERING INFORMATION (1) ORDERING CODE PACKAGING VOLUME REMARKS TCRT1000 Bulk MOQ: 1000 pcs, 1000 pcs/bulk Straight leads TCRT1010 Bulk MOQ: 1000 pcs, 1000 pcs/bulk Bent leads Note (1) MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT SENSOR Total power dissipation T 25 C P 200 mW amb tot Ambient temperature range T - 40 to + 85 C amb Storage temperature range T - 40 to + 100 C stg 2 mm distance to package, Soldering temperature T 260 C sd t 5 s INPUT (EMITTER) Reverse voltage V 5V R Forward current I 50 mA F Forward surge current t 10 s I 3A p FSM Power dissipation T 25 C P 100 mW amb V Junction temperature T 100 C j Rev. 1.8, 11-Jun-12 Document Number: 83752 1 For technical questions, contact: sensorstechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 TCRT1000, TCRT1010 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT OUTPUT (DETECTOR) Collector emitter voltage V 32 V CEO Emitter collector voltage V 5V ECO Collector current I 50 mA C Power dissipation T 25 C P 100 mW amb V Junction temperature T 100 C j ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb 300 Coupled device 200 Phototransistor 100 IR - diode 0 25 50 75 100 0 T - Ambient Temperature (C) 95 11071 amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT SENSOR V = 5 V, I = 20 mA, CE F (1) Collector current I 0.3 0.5 mA C d = 1 mm (figure 2) (2) Cross talk current V = 5 V, I = 20 mA, (figure 1) I 1A CE F CX Collector emitter saturation I = 20 mA, I = 0.1 mA, F C (1) V 0.3 V CEsat voltage d = 1 mm (figure 2) INPUT (EMITTER) Forward voltage I = 50 mA V 1.25 1.6 V F F Radiant intensity I = 50 mA, t = 20 ms I 7.5 mW/sr F p e Peak wavelength I = 100 mA 940 nm F P Virtual source diameter Method: 63 % encircled energy d 1.2 mm OUTPUT (DETECTOR) Collector emitter voltage I = 1 mA V 32 V C CEO Emitter collector voltage I = 100 A V5V E ECO Collector dark current V = 20 V, I = 0 A, E = 0 lx I 200 nA CE F CEO Notes (1) Measured with the Kodak neutral test card, white side with 90 % diffuse reflectance (2) Measured without reflecting medium Rev. 1.8, 11-Jun-12 Document Number: 83752 2 For technical questions, contact: sensorstechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW)