TSAL5100 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES Package type: leaded Package form: T-1 Dimensions (in mm): 5 Leads with stand-off Peak wavelength: = 940 nm p High reliability High radiant power High radiant intensity Angle of half intensity: = 10 96 11505 Low forward voltage Suitable for high pulse current operation Good spectral matching with Si photodetectors DESCRIPTION Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TSAL5100 is an infrared, 940 nm emitting diode in Halogen-free according to IEC 61249-2-21 definition GaAlAs/GaAs technology with high radiant power, molded in a blue-gray plastic package. APPLICATIONS Infrared remote control units with high power reqirements Free air transmission systems Infrared source for optical counters and card readers IR source for smoke detectors Smoke-automatic fire detectors PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e P r TSAL5100 130 10 940 800 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSAL5100 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.5, t = 100 s I 200 mA p p FM Surge forward current t = 100 s I 1.5 A p FSM Power dissipation P 160 mW V Junction temperature T 100 C j Operating temperature range T - 40 to + 85 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature t 5 s, 2 mm from case T 260 C sd J-STD-051, leads 7 mm soldered Thermal resistance junction/ambient R 230 K/W thJA on PCB Note T = 25 C, unless otherwise specified amb Document Number: 81007 For technical questions, contact: emittertechsupport vishay.com www.vishay.com Rev. 1.6, 29-Jun-09 1 TSAL5100 High Power Infrared Emitting Diode, Vishay Semiconductors 940 nm, GaAlAs/GaAs 120 180 160 100 140 120 80 R = 230 K/W thJA 100 60 80 R = 230 K/W thJA 60 40 40 20 20 0 0 010 20 30 40 50 60 70 80 90 100 0 10 203040 506070 80 90 100 21212 T - Ambient Temperature (C) T - Ambient Temperature (C) 21211 amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 20 ms V 1.35 1.6 V F p F Forward voltage I = 1 A, t = 100 s V 2.6 3 V F p F Temperature coefficient of V I = 1 mA TK - 1.8 mV/K F F VF Reverse current V = 5 V I 10 A R R Junction capacitance V = 0 V, f = 1 MHz, E = 0 C 25 pF R j I = 100 mA, t = 20 ms I 80 130 400 mW/sr F p e Radiant intensity I = 1 A, t = 100 s I 650 1000 mW/sr F p e Radiant power I = 100 mA, t = 20 ms 35 mW F p e Temperature coefficient of I = 20 mA TK - 0.6 %/K e F e Angle of half intensity 10 deg Peak wavelength I = 100 mA 940 nm F p Spectral bandwidth I = 100 mA 50 nm F Temperature coefficient of I = 100 mA TK 0.2 nm/K p F p Rise time I = 100 mA t 800 ns F r Fall time I = 100 mA t 800 ns F f Virtual source diameter method: 63 % encircled energy d 3.7 mm Note T = 25 C, unless otherwise specified amb Document Number: 81007 For technical questions, contact: emittertechsupport vishay.com www.vishay.com Rev. 1.6, 29-Jun-09 2 P - Power Dissipation (mW) V I - Forward Current (mA) F