X-On Electronics has gained recognition as a prominent supplier of TSHF5410 Infrared Emitters - High Power across the USA, India, Europe, Australia, and various other global locations. TSHF5410 Infrared Emitters - High Power are a product manufactured by Vishay. We provide cost-effective solutions for Infrared Emitters - High Power, ensuring timely deliveries around the world.

TSHF5410 Vishay

Hot TSHF5410 electronic component of Vishay
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Part No.TSHF5410
Manufacturer: Vishay
Category: Infrared Emitters - High Power
Description: Infrared Emitters - High Power 890nm,T-1.75 70mW/sr,+/-22deg.
Datasheet: TSHF5410 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.812 ea
Line Total: USD 0.81 
Availability - 4024
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2432
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 1.0239
10 : USD 0.6492
100 : USD 0.3953
1000 : USD 0.3578
4000 : USD 0.3084
8000 : USD 0.2812

23216
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.9662
10 : USD 0.6079
100 : USD 0.3382
1000 : USD 0.3046
4000 : USD 0.2792
8000 : USD 0.259

4024
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.812
10 : USD 0.5418
50 : USD 0.4172
80 : USD 0.2142
220 : USD 0.2016

   
Manufacturer
Product Category
RoHS - XON
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Radiant Intensity
Beam Angle
If - Forward Current
Vf - Forward Voltage
Power Rating
Minimum Operating Temperature
Maximum Operating Temperature
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Illumination Color
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Lens Shape
Viewing Angle
Cnhts
Fall Time
Hts Code
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Factory Pack Quantity :
Subcategory
Taric
Vr - Reverse Voltage
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We are delighted to provide the TSHF5410 from our Infrared Emitters - High Power category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TSHF5410 and other electronic components in the Infrared Emitters - High Power category and beyond.

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TSHF5410 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES Package type: leaded Package form: T-1 Dimensions (in mm): 5 Leads with stand-off Peak wavelength: = 890 nm p High reliability High radiant power High radiant intensity Angle of half intensity: = 22 94 8390 Low forward voltage Suitable for high pulse current operation High modulation bandwidth: f = 12 MHz c Good spectral matching with Si photodetectors Compliant to RoHS Directive 2002/95/EC and in DESCRIPTION accordance to WEEE 2002/96/EC Note TSHF5410 is an infrared, 890 nm emitting diode in GaAlAs ** Please see document Vishay Material Category Policy: double hetero (DH) technology with high radiant power and www.vishay.com/doc 99902 high speed, molded in a clear, untinted plastic package. APPLICATIONS Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements Transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK/FSK - coded, 450 kHz or 1.3 MHz) PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e p r TSHF5410 70 22 890 30 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSHF5410 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.5, t = 100 s I 200 mA p p FM Surge forward current t = 100 s I 1.5 A p FSM Power dissipation P 160 mW V Junction temperature T 100 C j Operating temperature range T - 40 to + 85 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature t 5 s, 2 mm from case T 260 C sd Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB R 230 K/W thJA Rev. 1.4, 24-Aug-11 Document Number: 81303 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 TSHF5410 www.vishay.com Vishay Semiconductors 120 180 160 100 140 80 120 R = 230 K/W thJA 100 60 80 R = 230 K/W thJA 40 60 40 20 20 0 0 0 1020 3040506070 8090100 0 10 203040 50607080 90 100 21212 T - Ambient Temperature (C) T - Ambient Temperature (C) 21211 amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 20 ms V 1.4 1.6 V F p F Forward voltage I = 1 A, t = 100 s V 2.3 V F p F Temperature coefficient of V I = 1 mA TK - 1.8 mV/K F F VF Reverse current V = 5 V I 10 A R R Junction capacitance V = 0 V, f = 1 MHz, E = 0 C 125 pF R j I = 100 mA, t = 20 ms I 45 70 135 mW/sr F p e Radiant intensity I = 1 A, t = 100 s I 700 mW/sr F p e Radiant power I = 100 mA, t = 20 ms 50 mW F p e Temperature coefficient of I = 100 mA TK - 0.35 %/K e F e Angle of half intensity 22 deg Peak wavelength I = 100 mA 890 nm F p Spectral bandwidth I = 100 mA 40 nm F Temperature coefficient of I = 100 mA TK 0.25 nm/K p F p Rise time I = 100 mA t 30 ns F r Fall time I = 100 mA t 30 ns F f Cut-off frequency I = 70 mA, I = 30 mA pp f 12 MHz DC AC c Virtual source diameter d2.1 mm Rev. 1.4, 24-Aug-11 Document Number: 81303 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
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