TSMF1000, TSMF1020, TSMF1030 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero FEATURES Package type: surface mount TSMF1000 TSMF1020 Package form: GW, RGW, yoke, axial Dimensions (L x W x H in mm): 2.5 x 2 x 2.7 Peak wavelength: = 890 nm p High radiant power Angle of half intensity: = 17 TSMF1030 Low forward voltage Suitable for high pulse current operation Versatile terminal configurations 16758-5 Package matches with detector TEMD1000 Floor life: 168 h, MSL 3, acc. J-STD-020 Compliant to RoHS Directive 2002/95/EC and in accordance with WEEE 2002/96/EC DESCRIPTION APPLICATIONS TSMF1000 series are infrared, 890 nm emitting diodes in GaAlAs double hetero (DH) technology with high radiant IrDA compatible data transmission power and high speed, molded in clear, untinted plastic Miniature light barrier packages (with lens) for surface mounting (SMD). Photointerrupters Optical switch Control and drive circuits Shaft encoders PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e P r TSMF1000 5 17 890 30 TSMF1020 5 17 890 30 TSMF1030 5 17 890 30 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSMF1000 Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Reverse gullwing TSMF1020 Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Gullwing TSMF1030 Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Yoke Note MOQ: minimum order quantity Rev. 1.8, 30-Jun-11 Document Number: 81061 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 TSMF1000, TSMF1020, TSMF1030 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.5, t 100 s I 200 mA p p FM Surge forward current t = 100 s I 0.8 A p FSM Power dissipation P 180 mW V Junction temperature T 100 C j Operating temperature range T - 40 to + 85 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature t 5 s T 260 C sd Soldered on PCB, pad dimensions: Thermal resistance junction/ambient R 400 K/W thJA 4 mm x 4 mm 200 120 180 100 160 140 80 120 100 60 R = 400 K/W R = 400 K/W 80 thJA thJA 40 60 40 20 20 0 0 0 1020 3040506070 8090 100 0 10 203040 50607080 90 100 21165 T - Ambient Temperature (C) 21166 T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 20 mA V 1.3 1.5 V F F Forward voltage I = 1 A, t = 100 s V 2.4 V F p F Temperature coefficient of V I = 1 mA TK - 1.8 mV/K F F VF Reverse current V = 5 V I 10 A R R Junction capacitance V = 0 V, f = 1 MHz, E = 0 C 160 pF R j I = 20 mA I 2.5 5 13 mW/sr F e Radiant intensity I = 100 mA, t = 100 s I 25 mW/sr F p e Radiant power I = 100 mA, t = 20 ms 35 mW F p e Temperature coefficient of I = 20 mA TK - 0.6 %/K e F e Angle of half intensity 17 deg Peak wavelength I = 20 mA 890 nm F p Spectral bandwidth I = 20 mA 40 nm F Temperature coefficient of I = 20 mA TK 0.2 nm/K p F p Rise time I = 20 mA t 30 ns F r Fall time I = 20 mA t 30 ns F f Cut-off frequency I = 70 mA, I = 30 mA pp f 12 MHz DC AC c Virtual source diameter d 1.2 mm Rev. 1.8, 30-Jun-11 Document Number: 81061 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F