TSHF5210 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES Package type: leaded Package form: T-1 Dimensions (in mm): 5 Leads with stand-off Peak wavelength: = 890 nm p High reliability High radiant power High radiant intensity Angle of half intensity: = 10 Low forward voltage 94 8390 Suitable for high pulse current operation High modulation bandwidth: f = 12 MHz c Good spectral matching with Si photodetectors Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Note DESCRIPTION ** Please see document Vishay Material Category Policy: TSHF5210 is an infrared, 890 nm emitting diode in GaAlAs www.vishay.com/doc 99902 double hetero (DH) technology with high radiant power and APPLICATIONS high speed, molded in a clear, untinted plastic package. Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements Transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK/FSK - coded, 450 kHz or 1.3 MHz) Smoke-automatic fire detectors PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e p r TSHF5210 180 10 890 30 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSHF5210 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.5, t = 100 s I 200 mA p p FM Surge forward current t = 100 s I 1.5 A p FSM Power dissipation P 160 mW V Junction temperature T 100 C j Operating temperature range T - 40 to + 85 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature t 5 s, 2 mm from case T 260 C sd Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB R 230 K/W thJA Rev. 1.4, 24-Aug-11 Document Number: 81313 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 TSHF5210 www.vishay.com Vishay Semiconductors 180 120 160 100 140 120 80 R = 230 K/W thJA 100 60 80 R = 230 K/W thJA 60 40 40 20 20 0 0 0 1020 3040506070 8090100 0 10 203040 50607080 90 100 21212 T - Ambient Temperature (C) 21211 T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 20 ms V 1.4 1.6 V F p F Forward voltage I = 1 A, t = 100 s V 2.3 V F p F Temperature coefficient of V I = 1 mA TK - 1.8 mV/K F F VF Reverse current V = 5 V I 10 A R R Junction capacitance V = 0 V, f = 1 MHz, E = 0 C 125 pF R j I = 100 mA, t = 20 ms I 120 180 360 mW/sr F p e Radiant intensity I = 1 A, t = 100 s I 1800 mW/sr F p e Radiant power I = 100 mA, t = 20 ms 50 mW F p e Temperature coefficient of I = 100 mA TK - 0.35 %/K e F e Angle of half intensity 10 deg Peak wavelength I = 100 mA 890 nm F p Spectral bandwidth I = 100 mA 40 nm F Temperature coefficient of I = 100 mA TK 0.25 nm/K p F p Rise time I = 100 mA t 30 ns F r Fall time I = 100 mA t 30 ns F f Cut-off frequency I = 70 mA, I = 30 mA pp f 12 MHz DC AC c Virtual source diameter d3.7 mm Rev. 1.4, 24-Aug-11 Document Number: 81313 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F