VS-HFA08SD60S-M3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES 2, 4 Ultrafast recovery time Ultrasoft recovery Very low I RRM Very low Q rr 1 3 Guaranteed avalanche N/C Anode DPAK (TO-252AA) Specified at operating conditions Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS BENEFITS I 8 A F(AV) Reduced RFI and EMI V 600 V R Reduced power loss in diode and switching transistor V at I 1.4 V F F Higher frequency operation t typ. 18 ns rr Reduced snubbing T max. 150 C J Reduced parts count Package DPAK (TO-252AA) Circuit configuration Single DESCRIPTION / APPLICATIONS These diodes are optimized to reduce losses and EMI / RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited fo r freewheeling, flyback, power converters, motor drives, and other applications where high speed and reduced switching losses are design requirements. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Cathode to anode voltage V 600 V RRM Maximum continuous forward current I T = 100 C 8 F C Single pulse forward current I 60 A FSM Peak repetitive forward current I 24 FRM Maximum power dissipation P T = 100 C 14 W D C Operating junction and storage temperature range T , T -55 to +150 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R I = 8 A -1.4 1.7 F V Forward voltage V I = 16 A See fig. 1 - 1.7 2.1 F F I = 8 A, T = 125 C - 1.4 1.7 F J V = V rated - 0.3 5.0 R R Maximum reverse I A R leakage current T = 125 C, V = 0.8 x V rated - 100 500 J R R Junction capacitance C V = 200 V See fig. 3 - 10 25 pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 12-Apr-18 Document Number: 93474 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-HFA08SD60S-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 200 A/s, V = 30 V - 18 - F F R Reverse recovery time t T = 25 C -37 55 ns rr J T = 125 C - 55 90 J T = 25 C - 3.5 5.0 J Peak recovery current I A RRM I = 8 A F T = 125 C - 4.5 8.0 J dI /dt = 200 A/s F T = 25 C - 65 138 J V = 200 V R Reverse recovery charge Q nC rr T = 125 C - 124 360 J T = 25 C - 240 - J Rate of fall of recovery current dI /dt A/s (rec)M T = 125 C - 210 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction T , T -55 - 150 C J Stg and storage temperature range Thermal resistance, R --3.5 thJC junction to case C/W Thermal resistance, R Typical socket mount - - 80 thJA junction to ambient -2.0 - g Weight -0.07 - oz. Marking device Case style DPAK (TO-252AA) HFA08SD60S Revision: 12-Apr-18 Document Number: 93474 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000