VS-HFA08TA60C-M3 www.vishay.com Vishay Semiconductors HEXFRED , Ultrafast Soft Recovery Diode, 2 x 4 A FEATURES Ultrafast and ultrasoft recovery Very low I and Q RRM rr Designed and qualified according to JEDEC -JESD47 Material categorization: for definitions of compliance 3L TO-220AB please see www.vishay.com/doc 99912 Base BENEFITS common Reduced RFI and EMI cathode 4 Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing 2 Reduced parts count 1 3 Common cathode Anode Anode DESCRIPTION VS-HFA08TA60C... is a state of the art center tap ultrafast recovery diode. Employing the latest in epitaxial PRIMARY CHARACTERISTICS construction and advanced processing techniques it Package 3L TO-220AB features a superb combination of characteristics which I 2 x 4 A result in performance which is unsurpassed by any rectifier F(AV) previously available. With basic ratings of 600 V and 4 A per V 600 V R leg continuous current, the VS-HFA08TA60C... is especially V at I 1.4 V F F well suited for use as the companion diode for IGBTs and t typ. 17 ns rr MOSFETs. In addition to ultrafast recovery time, the HEXFRED product line features extremely low values of T max. 150 C J peak recovery current (I ) and does not exhibit any RRM Circuit configuration Common cathode tendency to snap-off during the t portion of recovery. The b HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA08TA60C... is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Cathode to anode voltage V 600 V R per leg 4 Maximum continuous forward current I T = 100 C F C per device 8 A Single pulse forward current I 25 FSM Maximum repetitive forward current I 16 FRM T = 25 C 25 C Maximum power dissipation P W D T = 100 C 10 C Operating junction and storage temperature range T , T -55 to +150 C J Stg Revision: 02-Aug-17 Document Number: 96202 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-HFA08TA60C-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Cathode to anode V I = 100 A 600 - - BR R breakdown voltage I = 4.0 A -1.5 1.8 F V Maximum forward voltage V I = 8.0 A See fig. 1 - 1.8 2.2 FM F I = 4.0 A, T = 125 C - 1.4 1.7 F J V = V rated - 0.17 3.0 Maximum reverse R R I See fig. 2 A RM leakage current T = 125 C, V = 0.8 x V rated - 44 300 J R R Junction capacitance C V = 200 V See fig. 3 - 4.0 8.0 pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS t I = 1.0 A, dI /dt = 200 A/s, V = 30 V - 17 - rr F F R Reverse recovery time t T = 25 C -28 42 ns rr1 J See fig. 5, 6 and 16 t T = 125 C - 38 57 rr2 J I T = 25 C - 2.9 5.2 RRM1 J Peak recovery current A See fig. 7 and 8 I T = 125 C I = 4.0 A - 3.7 6.7 RRM2 J F dI /dt = 200 A/s F Q T = 25 C - 40 60 rr1 J Reverse recovery charge V = 200 V nC R See fig. 9 and 10 Q T = 125 C - 70 105 rr2 J Peak rate of fall of recovery dI /dt1 T = 25 C - 280 - (rec)M J current during t A/s b dI /dt2 T = 125 C - 235 - (rec)M J See fig. 11 and 12 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Lead temperature T 0.063 from case (1.6 mm) for 10 s - - 300 C lead Thermal resistance, R --5.0 thJC junction to case Thermal resistance, R Typical socket mount - - 80 K/W thJA junction to ambient Thermal resistance, R Mounting surface, flat, smooth and greased - 0.5 - thCS case to heatsink -2.0 - g Weight -0.07 - oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Marking device Case style 3L TO-220AB HFA08TA60C Revision: 02-Aug-17 Document Number: 96202 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000