VSSAF5N50 www.vishay.com Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier FEATURES TMBS eSMP Series Very low profile - typical height of 0.95 mm Ideal for automated placement Trench MOS Schottky technology Low power losses, high efficiency Low forward voltage drop Bottom View Top View Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C SlimSMA (DO-221AC) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 Cathode Anode TYPICAL APPLICATIONS For use in low voltage, high frequency inverters, click logo to get started DESIGN SUPPORT TOOLS freewheeling, DC/DC converters, and polarity protection applications. Models Available MECHANICAL DATA Case: SlimSMA (DO-221AC) Molding compound meets UL 94 V-0 flammability rating PRIMARY CHARACTERISTICS Base P/N-M3 - halogen-free, RoHS-compliant, and I 5.0 A F(AV) commercial grade V 50 V RRM Terminals: matte tin plated leads, solderable per I 100 A FSM J-STD-002 and JESD22-B102 V at I = 5.0 A 0.41 V F F M3 suffix meets JESD 201 class 2 whisker test T max. 150 C J Polarity: color band denotes cathode end Package SlimSMA (DO-221AC) Circuit configuration Single MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VSSAF5N50 UNIT Device marking code 5N5 Maximum repetitive peak reverse voltage V 50 V RRM (1) I 5.0 F Maximum DC forward current (fig. 1) A (2) I 3.0 F Peak forward surge current 10 ms single half sine-wave I 100 A FSM superimposed on rated load Maximum DC reverse voltage V 35 V DC Operating junction and storage temperature range T , T -40 to +150 C J STG Notes (1) Mounted on 10 mm x 10 mm pad areas, 2 oz. FR4 PCB (2) Free air, mounted on recommended copper pad area Revision: 04-May-2018 Document Number: 87719 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VSSAF5N50 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 2.5 A 0.41 - F T = 25 C A I = 5.0 A 0.48 0.56 F (1) Instantaneous forward voltage V V F I = 2.5 A 0.31 - F T = 125 C A I = 5.0 A 0.41 0.50 F T = 25 C 0.02 - A V = 35 V R T = 125 C 12 - A (2) Reverse current I mA R T = 25 C - 1.4 A V = 50 V R T = 125 C 19 50 A Typical junction capacitance 4.0 V, 1 MHz C 850 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise specified) A PARAMETER SYMBOL VSSAF5N50 UNIT (1) R 115 JA Typical thermal resistance C/W (1) R 12 JM Note (1) Free air, mounted on recommended PCB, 2 oz. pad area thermal resistance R - junction to ambient JA ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE VSSAF5N50-M3/6A 0.032 6A 3500 7 diameter plastic tape and reel VSSAF5N50-M3/6B 0.032 6B 14 000 13 diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise specified) A 6 2.8 D = 0.5 Rth = 12 C/W JM 2.4 5 D = 0.3 D = 0.2 2.0 4 D = 0.8 Rth = 150 C/W 1.6 JA D = 0.1 3 D = 1.0 1.2 2 T 0.8 1 0.4 D = t /T p t p 0 0.0 025 50 75 100 125 150 0123456 Average Forward Current (A) Mount Temperature (C) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Average Power Loss Characteristics Revision: 04-May-2018 Document Number: 87719 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Rectified Current (A) Average Power Loss (W)