X-On Electronics has gained recognition as a prominent supplier of VS-VSKJ166/08PBF Small Signal Switching Diodes across the USA, India, Europe, Australia, and various other global locations. VS-VSKJ166/08PBF Small Signal Switching Diodes are a product manufactured by Vishay. We provide cost-effective solutions for Small Signal Switching Diodes, ensuring timely deliveries around the world.

VS-VSKJ166/08PBF Vishay

VS-VSKJ166/08PBF electronic component of Vishay
VS-VSKJ166/08PBF Vishay
VS-VSKJ166/08PBF Small Signal Switching Diodes
VS-VSKJ166/08PBF  Semiconductors

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Part No. VS-VSKJ166/08PBF
Manufacturer: Vishay
Category: Small Signal Switching Diodes
Description: Small Signal Switching Diodes Input Mod - IAP DBC
Datasheet: VS-VSKJ166/08PBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 44.715 ea
Line Total: USD 44.72 
Availability - 85
Ship by Fri. 07 Mar to Tue. 11 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
85
Ship by Fri. 07 Mar to Tue. 11 Mar
MOQ : 1
Multiples : 1
1 : USD 44.715
10 : USD 39.105
30 : USD 39.094
105 : USD 34.375
5010 : USD 34.364

   
Manufacturer
Product Category
Product
Mounting Style
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Package / Case
Hts Code
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We are delighted to provide the VS-VSKJ166/08PBF from our Small Signal Switching Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VS-VSKJ166/08PBF and other electronic components in the Small Signal Switching Diodes category and beyond.

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VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A (INT-A-PAK Power Modules) FEATURES High voltage Electrically isolated by DBC ceramic (AI O ) 2 3 3500 V isolating voltage RMS Industrial standard package High surge capability Glass passivated chips Modules uses high voltage power diodes in four basic configurations Simple mounting INT-A-PAK UL approved file E78996 Designed and qualified for multiple level Material categorization: for definitions of compliance PRODUCT SUMMARY please see www.vishay.com/doc 99912 I 165 A to 230 A F(AV) Type Modules - Diode, High Voltage APPLICATIONS Package INT-A-PAK DC motor control and drives Single diode, two diodes common anode, Battery chargers Circuit two diodes common cathode, two diodes Welders doubler circuit Power converters MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VSK.166.. VSK.196.. VSK.236.. UNITS 165 195 230 A I F(AV) T 100 100 100 C C I 260 305 360 F(RMS) 50 Hz 4000 4750 5500 A I FSM 60 Hz 4200 4980 5765 50 Hz 80 113 151 2 2 I t kA s 60 Hz 73 103 138 2 2 I t 798 1130 1516 kA s V 400 to 1600 V RRM T Range -40 to +150 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM REPETITIVE PEAK V , MAXIMUM NON-REPETITIVE I RRM RSM RRM VOLTAGE TYPE NUMBER REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C CODE V V mA 04 400 500 08 800 900 VS-VSK.166 VS-VSK.196 12 1200 1300 20 VS-VSK.236 14 1400 1500 16 1600 1700 Revision: 29-Sep-15 Document Number: 94357 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION VALUES PARAMETER SYMBOL TEST CONDITIONS UNITS VSK.166 VSK.196 VSK.236 165 195 230 A Maximum average on-state I 180 conduction, half sine wave F(AV) current at case temperature 100 100 100 C Maximum RMS on-state current I 260 305 360 F(RMS) t = 10 ms 4000 4750 5500 No voltage Maximum peak, one-cycle reapplied t = 8.3 ms 4200 4980 5765 A on-state, non-repetitive I FSM t = 10 ms 3350 4000 4630 100 % V RRM surge current Sine half wave, reapplied t = 8.3 ms 3500 4200 4850 initial T = J t = 10 ms 80 113 151 No voltage T maximum J reapplied t = 8.3 ms 73 103 138 2 2 2 Maximum I t for fusing I t kA s t = 10 ms 56 80 107 100 % V RRM reapplied t = 8.3 ms 52 73 98 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 798 1130 1516 kA s Low level value of threshold voltage V (16.7 % x x I < I < x I ), T maximum 0.73 0.69 0.7 F(TO)1 F(AV) F(AV) J V High level value of threshold voltage V (I > x I ), T maximum 0.88 0.78 0.83 F(TO)2 F(AV) J Low level value on-state r (16.7 % x x I < I < x I ), T maximum 1.5 1.3 1.2 t1 F(AV) F(AV) J slope resistance m High level value on-state r (I > x I ), T maximum 1.26 1.2 1.07 t2 F(AV) J I = x I , T = 25 C, 180 conduction FM F(AV) J Maximum forward voltage drop V 1.43 1.38 1.46 V FM 2 Average power = V x I + r x (I ) F(TO) F(AV) f F(RMS) BLOCKING PARAMETER SYMBOL TEST CONDITIONS VSK.166 VSK.196 VSK.236 UNITS Maximum peak reverse and I T = 150 C 20 mA RRM J off-state leakage current 50 Hz, circuit to base, all terminals shorted, RMS insulation voltage V 3500 V INS t = 1 s THERMAL AND MECHANICAL SPECIFICATIONS VALUES PARAMETER SYMBOL TEST CONDITIONS UNITS VSK.166 VSK.196 VSK.236 Maximum junction operating and T , T -40 to +150 C J Stg storage temperature range Maximum thermal resistance, R DC operation 0.2 0.16 0.14 thJC junction to case per junction K/W Maximum thermal resistance, R Mounting surface smooth, flat and greased 0.05 thCS case to heatsink per module IAP to heatsink Mounting A mounting compound is recommended and 4 to 6 Nm torque 10 % busbar to IAP the torque should be rechecked after a period of 3 hours to allow for the spread of 200 g Approximate weight the compound. Lubricated threads. 7.1 oz. Case style INT-A-PAK Revision: 29-Sep-15 Document Number: 94357 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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