X-On Electronics has gained recognition as a prominent supplier of WMJ80N65F2 MOSFET across the USA, India, Europe, Australia, and various other global locations. WMJ80N65F2 MOSFET are a product manufactured by Wayon. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

WMJ80N65F2 Wayon

WMJ80N65F2 electronic component of Wayon
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See Product Specifications
Part No.WMJ80N65F2
Manufacturer: Wayon
Category: MOSFET
Description: Transistor: N-MOSFET; unipolar
Datasheet: WMJ80N65F2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 15.8001 ea
Line Total: USD 15.8

Availability - 144
Ship by Thu. 01 Aug to Wed. 07 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
136
Ship by Thu. 01 Aug to Wed. 07 Aug
MOQ : 1
Multiples : 1
1 : USD 15.314
3 : USD 6.604
7 : USD 6.24

   
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We are delighted to provide the WMJ80N65F2 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the WMJ80N65F2 and other electronic components in the MOSFET category and beyond.

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The WMJ80N65F2 is an N-channel, unipolar Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) manufactured by Wayon. This type of MOSFET is used in circuits that require switching of electronic signals in low voltage and current applications. It has an enhancment-mode structure and is available in TO-220F and TO-220F-3L form factors. It can handle up to 80A of drain current in pulsed mode and up to 65A in DC conditions. It is designed to work in wide range of operating voltages from 10V to 650V allowing for wide range of designs to achieve desired performance.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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