X-On Electronics has gained recognition as a prominent supplier of BUJ302AX,127 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BUJ302AX,127 Bipolar Transistors - BJT are a product manufactured by WeEn Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BUJ302AX,127 WeEn Semiconductor

BUJ302AX,127 electronic component of WeEn Semiconductor
BUJ302AX,127 WeEn Semiconductor
BUJ302AX,127 Bipolar Transistors - BJT
BUJ302AX,127  Semiconductors

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See Product Specifications
Part No. BUJ302AX,127
Manufacturer: WeEn Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN 400 V 4 A
Datasheet: BUJ302AX,127 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.0987 ea
Line Total: USD 1.1 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ : 6000
Multiples : 1
6000 : USD 0.3841
9000 : USD 0.3803
10000 : USD 0.3765
15000 : USD 0.3726
20000 : USD 0.369
25000 : USD 0.3653
30000 : USD 0.3616
50000 : USD 0.358
100000 : USD 0.3543

0
Ship by Tue. 18 Mar to Fri. 21 Mar
MOQ : 1
Multiples : 1
1 : USD 0.814
10 : USD 0.797
30 : USD 0.7878
100 : USD 0.7764

0
Ship by Fri. 07 Mar to Tue. 11 Mar
MOQ : 1
Multiples : 1
1 : USD 1.0987
10 : USD 0.5863
100 : USD 0.4697
500 : USD 0.418
1000 : USD 0.3696
5000 : USD 0.3278
10000 : USD 0.3234

0
Ship by Fri. 07 Mar to Tue. 11 Mar
MOQ : 1
Multiples : 1
1 : USD 0.9959
3 : USD 0.7187
10 : USD 0.5807
30 : USD 0.5216
40 : USD 0.3797

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Maximum Operating Temperature
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BUJ302AX,127 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUJ302AX,127 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BUJ302AX NPN power transistor 9 October 2018 Product data sheet 1. General description High voltage, high speed planar passivated NPN power switching transistor in a SOT186A (TO-220F)full pac plastic package. 2. Features and benefits Fast switching Isolated package Low thermal resistance Very high voltage capability Very low switching and conduction losses 3. Applications DC-to-DC converters High frequency electronic lighting ballasts Inverters Motor control systems 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I peak collector current Fig. 1 Fig. 2 Fig. 3 - - 8 A CM P total power dissipation T 25 C Fig. 4 - - 26 W tot h V collector-emitter peak V = 0 V - - 1050 V CESM BE voltage Static characteristics h DC current gain I = 0.1 A V = 5 V T = 25 C 48 66 100 FE C CE h Fig. 11 I = 0.8 A V = 3 V T = 25 C 25 42 50 C CE h Fig. 12WeEn Semiconductors BUJ302AX NPN power transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base C mb 2 C collector B 3 E emitter E mb n.c. isolated sym123 1 2 3 TO-220F (SOT186A) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUJ302AX TO-220F plastic single-ended package isolated heatsink mounted 1 SOT186A mounting hole 3-lead TO-220full pac BUJ302AX All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 9 October 2018 2 / 12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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