BUJ303CD,118 WeEn Semiconductor

BUJ303CD NPN power transistor 6 August 2018 Product data sheet 1. General description High voltage high speed planar passivated NPN power switching transistor in a SOT428 (DPAK) surface mountable plastic package. 2. Features and benefits Fast switching Low thermal resistance Surface mountable package Tight DC gain spreads Very high voltage capability Very low switching and conduction losses 3. Applications DC-to-DC converters High frequency electronic lighting ballasts Inverters Motor control systems 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I peak collector current Fig. 1 Fig. 2 Fig. 3 - - 10 A CM P total power dissipation T 25 C Fig. 4 - - 80 W tot mb V collector-emitter peak V = 0 V - - 1050 V CESM BE voltage Static characteristics h DC current gain I = 10 mA V = 3 V T = 25 C 28 34 47 FE C CE mb Fig. 12 I = 250 mA V = 3 V T = 25 C 35 43 57 C CE mb Fig. 12 I = 800 mA V = 3 V T = 25 C 31 37 48 C CE mb Fig. 12WeEn Semiconductors BUJ303CD NPN power transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base C 2 C collector 1 B 3 E emitter E mb C mounting base connected to sym123 collector DPAK (SOT428) 1 it is not possible to make a connection to pin 2 of the SOT428 (DPAK) package. 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUJ303CD DPAK plastic single-ended surface-mounted package (DPAK) 3 leads SOT428 (one lead cropped) 7. Marking Table 4. Marking codes Type number Marking code BUJ303CD BUJ303CD BUJ303CD All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 6 August 2018 2 / 13