X-On Electronics has gained recognition as a prominent supplier of BUJD103AD,118 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BUJD103AD,118 Bipolar Transistors - BJT are a product manufactured by WeEn Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BUJD103AD,118 WeEn Semiconductor

BUJD103AD,118 electronic component of WeEn Semiconductor
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Part No.BUJD103AD,118
Manufacturer: WeEn Semiconductor
Category: Bipolar Transistors - BJT
Description: BUJD103AD/DPAK/REEL 13" Q1/T1
Datasheet: BUJD103AD,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.0374 ea
Line Total: USD 1.04 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 7500
Multiples : 2500
7500 : USD 0.3567
25000 : USD 0.3529

0
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 1.0374
3 : USD 0.8112
10 : USD 0.6815
30 : USD 0.6139
36 : USD 0.4415

   
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We are delighted to provide the BUJD103AD,118 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUJD103AD,118 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BUJ103AD Silicon diffused power transistor Rev. 3 18 October 2016 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 (D-PAK) surface mounted package. 1.2 Features and benefits Low thermal resistance Fast switching 1.3 Applications Electronic lighting ballasts DC-to-DC converters Inverters Motor control systems 1.4 Quick reference data V 700 V I 4 A CESM C P 80 W h = 12.5 (typ) tot FEsat 2. Pinning information Table 1. Pinning Pin Description Simplified outline Symbol 1 base mb C 1 2 collector B 3emitter mb mounting base connected to collector E sym123 SOT428 (D-PAK) 1 It is not possible to make a connection to pin 2 of the SOT428 (D-PAK) package.WeEn Semiconductors BUJ103AD Silicon diffused power transistor 3. Ordering information Table 2. Ordering information Type number Package Name Description Version BUJ103AD D-PAK plastic single-ended surface mounted package 3 leads (one lead cropped) SOT428 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V peak collector-emitter voltage V = 0 V - 700 V CESM BE V collector-base voltage open emitter - 700 V CBO V collector-emitter voltage open base - 400 V CEO I collector current (DC) - 4 A C I peak collector current - 8 A CM I base current (DC) - 2 A B I peak base current - 4 A BM P total power dissipation T 25 C see Figure 1 -80 W tot mb T storage temperature 65 +150 C stg T junction temperature - 150 C j 001aab993 120 P der (%) 80 40 0 0 40 80 120 160 T (C) mb P tot P % = ------------------------- 100% der P tot25 C Fig 1. Normalized total power dissipation as a function of mounting base temperature BUJ103AD All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2016. All rights reserved Product data sheet Rev.3 18 October 2016 2 / 10

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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