BUJD203AD,118 WeEn Semiconductor

BUJD203AD NPN power transistor with integrated diode 23 July 2018 Product data sheet 1. General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti- parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic package. 2. Features and benefits Fast switching High voltage capability Integrated anti-parallel E-C diode Surface mountable package Very low switching and conduction losses 3. Applications DC-to-DC converters Electronic lighting ballasts Inverters Motor control systems 4. Pinning information Table 1. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base C 2 C collector 1 B 3 E emitter mb C mounting base connected to E sym131 collector DPAK (SOT428) 1 it is not possible to make a connection to pin 2 of the SOT428 (DPAK) packageWeEn Semiconductors BUJD203AD NPN power transistor with integrated diode 5. Ordering information Table 2. Ordering information Type number Package Name Description Version BUJD203AD DPAK plastic single-ended surface-mounted package (DPAK) 3 leads SOT428 (one lead cropped) BUJD203AD All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 23 July 2018 2 / 13