X-On Electronics has gained recognition as a prominent supplier of PHD13003C,126 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PHD13003C,126 Bipolar Transistors - BJT are a product manufactured by WeEn Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PHD13003C,126 WeEn Semiconductor

PHD13003C,126 electronic component of WeEn Semiconductor
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Part No.PHD13003C,126
Manufacturer: WeEn Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors (NPN/PNP) NPN 1.5A 400V TO-92-3 RoHS
Datasheet: PHD13003C,126 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.1383 ea
Line Total: USD 0.69 
Availability - 9428
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
9428
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ : 5
Multiples : 5
5 : USD 0.1383
50 : USD 0.1221
150 : USD 0.115
500 : USD 0.1063
2000 : USD 0.1024
4000 : USD 0.1

3267
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 807
Multiples : 1
807 : USD 0.1218
1000 : USD 0.1178
2500 : USD 0.1143

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Transistor Type
Current - Collector Ic Max
Voltage - Collector Emitter Breakdown Max
Power - Max
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We are delighted to provide the PHD13003C,126 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PHD13003C,126 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PHD13003C NPN power transistor with integrated diode Rev.02 - 29 May 2018 Product data sheet 1. General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel emitter-collector diode in a SOT54 (TO-92) plastic package. 2. Features and benefits High typical DC current gain Fast switching High voltage capability Integrated anti-parallel E-C diode 3. Applications Compact fluorescent lamps (CFL) Low power electronic lighting ballasts Off-line self-oscillating power supplies (SOPS) for battery charging 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating V collector-emitter peak V = 0 V 700 V CESM BE voltage I DC 1.5 A C collector current P total power dissipation T 25 C Fig. 1 2.1 W tot lead Symbol Parameter Conditions Min Typ Max Unit Static characteristics h DC current gain I = 0.5 A V = 2 V T = 25 C 8 17 25 FE C CE jWeEn Semiconductors PHD13003C NPN power transistor with integrated diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base 2 C collector 3 E emitter 3 2 1 TO-92 (SOT54) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PHD13003C TO-92 plastic single-ended leaded (through hole) package 3 leads SOT54 PHD13003C All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 29 May 2018 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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