X-On Electronics has gained recognition as a prominent supplier of W631GG6KB-12 DRAM across the USA, India, Europe, Australia, and various other global locations. W631GG6KB-12 DRAM are a product manufactured by Winbond. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

W631GG6KB-12 Winbond

W631GG6KB-12 electronic component of Winbond
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Part No.W631GG6KB-12
Manufacturer: Winbond
Category: DRAM
Description: DRAM Chip DDR3 SDRAM 1Gbit 64Mx16 1.5V 96-Pin WBGA
Datasheet: W631GG6KB-12 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3: USD 5.8932 ea
Line Total: USD 17.68 
Availability - 0
MOQ: 3  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 190
Multiples : 1
190 : USD 0

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3
Multiples : 1
3 : USD 5.8932
10 : USD 5.2362
25 : USD 5.1626
50 : USD 5.0595

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3
Multiples : 1
3 : USD 5.8932
10 : USD 5.2362
25 : USD 5.1626
50 : USD 5.0595

   
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We are delighted to provide the W631GG6KB-12 from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the W631GG6KB-12 and other electronic components in the DRAM category and beyond.

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W631GG6KB 8M 8 BANKS 16 BIT DDR3 SDRAM Table of Contents- 1. GENERAL DESCRIPTION ................................................................................................................... 5 2. FEATURES ........................................................................................................................................... 5 3. ORDER INFORMATION ....................................................................................................................... 6 4. KEY PARAMETERS ............................................................................................................................. 7 5. BALL CONFIGURATION ...................................................................................................................... 8 6. BALL DESCRIPTION ............................................................................................................................ 9 7. BLOCK DIAGRAM .............................................................................................................................. 11 8. FUNCTIONAL DESCRIPTION ............................................................................................................ 12 8.1 Basic Functionality .............................................................................................................................. 12 8.2 RESET and Initialization Procedure .................................................................................................... 12 8.2.1 Power-up Initialization Sequence ..................................................................................... 12 8.2.2 Reset Initialization with Stable Power .............................................................................. 14 8.3 Programming the Mode Registers ....................................................................................................... 15 8.3.1 Mode Register MR0 ......................................................................................................... 17 8.3.1.1 Burst Length, Type and Order ................................................................................ 18 8.3.1.2 CAS Latency........................................................................................................... 18 8.3.1.3 Test Mode............................................................................................................... 19 8.3.1.4 DLL Reset............................................................................................................... 19 8.3.1.5 Write Recovery ....................................................................................................... 19 8.3.1.6 Precharge PD DLL ................................................................................................. 19 8.3.2 Mode Register MR1 ......................................................................................................... 20 8.3.2.1 DLL Enable/Disable ................................................................................................ 20 8.3.2.2 Output Driver Impedance Control ........................................................................... 21 8.3.2.3 ODT RTT Values .................................................................................................... 21 8.3.2.4 Additive Latency (AL) ............................................................................................. 21 8.3.2.5 Write leveling .......................................................................................................... 21 8.3.2.6 Output Disable ........................................................................................................ 21 8.3.3 Mode Register MR2 ......................................................................................................... 22 8.3.3.1 Partial Array Self Refresh (PASR) .......................................................................... 23 8.3.3.2 CAS Write Latency (CWL) ...................................................................................... 23 8.3.3.3 Auto Self Refresh (ASR) and Self Refresh Temperature (SRT) ............................. 23 8.3.3.4 Dynamic ODT (Rtt WR) ......................................................................................... 23 8.3.4 Mode Register MR3 ......................................................................................................... 24 8.3.4.1 Multi Purpose Register (MPR) ................................................................................ 24 8.4 No OPeration (NOP) Command .......................................................................................................... 25 8.5 Deselect Command ............................................................................................................................. 25 8.6 DLL-off Mode ...................................................................................................................................... 25 8.7 DLL on/off switching procedure ........................................................................................................... 26 8.7.1 DLL on to DLL off Procedure ....................................................................................... 26 8.7.2 DLL off to DLL on Procedure ....................................................................................... 27 8.8 Input clock frequency change ............................................................................................................. 28 8.8.1 Frequency change during Self-Refresh............................................................................ 28 8.8.2 Frequency change during Precharge Power-down .......................................................... 28 8.9 Write Leveling ..................................................................................................................................... 30 8.9.1 DRAM setting for write leveling & DRAM termination function in that mode .................... 31 Publication Release Date: Mar. 23, 2017 Revision: A10 - 1 - W631GG6KB 8.9.2 Write Leveling Procedure ................................................................................................. 31 8.9.3 Write Leveling Mode Exit ................................................................................................. 33 8.10 Multi Purpose Register ........................................................................................................................ 34 8.10.1 MPR Functional Description ............................................................................................. 35 8.10.2 MPR Register Address Definition ..................................................................................... 36 8.10.3 Relevant Timing Parameters ............................................................................................ 36 8.10.4 Protocol Example ............................................................................................................. 36 8.11 ACTIVE Command .............................................................................................................................. 42 8.12 PRECHARGE Command .................................................................................................................... 42 8.13 READ Operation ................................................................................................................................. 43 8.13.1 READ Burst Operation ..................................................................................................... 43 8.13.2 READ Timing Definitions .................................................................................................. 44 8.13.2.1 READ Timing Clock to Data Strobe relationship .................................................... 45 8.13.2.2 READ Timing Data Strobe to Data relationship ..................................................... 46 8.13.2.3 tLZ(DQS), tLZ(DQ), tHZ(DQS), tHZ(DQ) Calculation ............................................. 47 8.13.2.4 tRPRE Calculation .................................................................................................. 48 8.13.2.5 tRPST Calculation .................................................................................................. 48 8.13.2.6 Burst Read Operation followed by a Precharge...................................................... 54 8.14 WRITE Operation ................................................................................................................................ 56 8.14.1 DDR3 Burst Operation ..................................................................................................... 56 8.14.2 WRITE Timing Violations ................................................................................................. 56 8.14.2.1 Motivation ............................................................................................................... 56 8.14.2.2 Data Setup and Hold Violations .............................................................................. 56 8.14.2.3 Strobe to Strobe and Strobe to Clock Violations ..................................................... 56 8.14.2.4 Write Timing Parameters ........................................................................................ 56 8.14.3 Write Data Mask............................................................................................................... 57 8.14.4 tWPRE Calculation........................................................................................................... 58 8.14.5 tWPST Calculation ........................................................................................................... 58 8.15 Refresh Command .............................................................................................................................. 65 8.16 Self-Refresh Operation ....................................................................................................................... 67 8.17 Power-Down Modes ............................................................................................................................ 69 8.17.1 Power-Down Entry and Exit ............................................................................................. 69 8.17.2 Power-Down clarifications - Case 1 ................................................................................. 75 8.17.3 Power-Down clarifications - Case 2 ................................................................................. 75 8.17.4 Power-Down clarifications - Case 3 ................................................................................. 76 8.18 ZQ Calibration Commands .................................................................................................................. 77 8.18.1 ZQ Calibration Description ............................................................................................... 77 8.18.2 ZQ Calibration Timing ...................................................................................................... 78 8.18.3 ZQ External Resistor Value, Tolerance, and Capacitive loading ...................................... 78 8.19 On-Die Termination (ODT) .................................................................................................................. 79 8.19.1 ODT Mode Register and ODT Truth Table ...................................................................... 79 8.19.2 Synchronous ODT Mode .................................................................................................. 80 8.19.2.1 ODT Latency and Posted ODT ............................................................................... 80 8.19.2.2 Timing Parameters ................................................................................................. 80 8.19.2.3 ODT during Reads .................................................................................................. 82 8.19.3 Dynamic ODT .................................................................................................................. 83 8.19.3.1 Functional Description: ........................................................................................... 83 8.19.3.2 ODT Timing Diagrams ............................................................................................ 84 8.19.4 Asynchronous ODT Mode ................................................................................................ 88 Publication Release Date: Mar. 23, 2017 Revision: A10 - 2 -

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
WINBOND ELECTRONICS
WINBOND ELECTRONICS CORP AMERICA
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