C6D20065D
V = 650 V
RRM
Silicon Carbide Schottky Diode
I (T =155C) = 20 A**
F C
Z -Rec Rectifier
Q = 35 nC**
c
Features Package
th
New 6 Generation Technology
Low Forward Voltage Drop (V )
F
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
Low Leakage Current (I )
r
Temperature-Independent Switching Behavior
Positive Temperature Coefficient on V
F
TO-247-3
Benefits
Higher System Level Efficiency
Increase System Power Density
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
Switch Mode Power Supplies (SMPS)
Part Number Package Marking
Battery Charging Systems
Industrial Power Supplies
C6D20065D TO-247-3 C6D20065
Server/Telecom Power Supplies
Solar
Maximum Ratings (T = 25 C unless otherwise specified)
C
Symbol Parameter Value Unit Test Conditions Note
V Repetitive Peak Reverse Voltage 650 V
RRM
V DC Blocking Voltage 650 V
DC
38/76 T =25C
C
Continuous Forward Current
I 20/40 A T =125C Fig. 3
F C
(Per Leg/Device)
10/20 T =155C
C
45* T =25C, t = 10 ms, Half Sine Wave
C P
I Repetitive Peak Forward Surge Current A
FRM
27* T =110C, t =10 ms, Half Sine Wave
C P
86* T =25C, t = 10 ms, Half Sine Wave
C p
I Non-Repetitive Peak Forward Surge Current A Fig. 8
FSM
75* T =110C, t = 10 ms, Half Sine Wave
C p
1250* T =25C, t = 10 s, Pulse
C P
I Non-Repetitive Peak Forward Surge Current A Fig. 8
F,Max
1100* T =110C, t = 10 s, Pulse
C P
116 T =25C
C
P Power Dissipation W Fig. 4
tot
50 T =110C
C
-55 to
T , T Operating Junction and Storage Temperature C
J stg
+175
1 Nm
M3 Screw
TO-247 Mounting Torque
6-32 Screw
8.8 lbf-in
* **
Per Leg, Per Device
C6D20065D, Rev. A, 05-2020
1Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
1.27 1.50 I = 10 A T =25C
F J
V Forward Voltage V Fig. 1
F
1.37 1.60 I = 10 A T =175C
F J
2 50 V = 650 V T =25C
R J
I Reverse Current A Fig. 2
R
12 200 V = 650 V T =175C
R J
Q Total Capacitive Charge 35 nC V = 400 V, T = 25C Fig. 5
C R J
611 V = 0 V, T = 25C, f = 1 MHz
R J
C Total Capacitance 67 pF V = 200 V, T = 25C, f = 1 MHz Fig. 6
R J
53 V = 400 V, T = 25C, f = 1 MHz
R J
E Capacitance Stored Energy 5.2 J V = 400 V Fig. 7
C R
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter Typ. Unit Note
R Thermal Resistance from Junction to Case 1.29 C/W Fig. 9
JC
Typical Performance
100
20
18
T = -55C
J
T = 25C
J
16 80
T = 75C
J
T = 125C
J
14
T = 175C
J
12
60
T = 175 C
J
10
T = 125 C
J
8
40
T = 75 C
J
6
T = 25 C
J
4
20
T = -55 C
J
2
0
0
0.50 0.75 1.00 1.25 1.50 1.75 2.00
0 100 200 300 400 500 600 700 800
Foward Voltage, V (V)
V (V) V (V)
V (V) F ReversVe V (V)oltage, V (V)
R
FF R
R
Figure 1. Forward Characteristics Figure 2. Reverse Characteristics
C6D20065D, Rev. A, 05-2020
2
Foward Current, I (A)
F
II (A) (A)
F
F
Reverse Leakage Current, I (uA)
RR
I I ( (mA)mA)
R R