X-On Electronics has gained recognition as a prominent supplier of CAB006A12GM3 Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. CAB006A12GM3 Discrete Semiconductor Modules are a product manufactured by Wolfspeed. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

CAB006A12GM3 Wolfspeed

CAB006A12GM3 electronic component of Wolfspeed
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Part No.CAB006A12GM3
Manufacturer: Wolfspeed
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules
Datasheet: CAB006A12GM3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 363.682 ea
Line Total: USD 363.68 
Availability - 155
Ship by Mon. 30 Dec to Wed. 01 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
155
Ship by Mon. 30 Dec to Wed. 01 Jan
MOQ : 1
Multiples : 1
1 : USD 363.682
18 : USD 362.604
252 : USD 360.327
504 : USD 359.832
1008 : USD 358.864
2502 : USD 358.38

   
Manufacturer
Product Category
Product
Type
Vf - Forward Voltage
Vr - Reverse Voltage
Vgs - Gate-Source Voltage
Mounting Style
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Technology
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We are delighted to provide the CAB006A12GM3 from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CAB006A12GM3 and other electronic components in the Discrete Semiconductor Modules category and beyond.

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CAB006A12GM3 V 1200 V DS 1200 V, 6 m All-Silicon Carbide R 6 m DS(on) Half-Bridge Module Technical Features Package Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Aluminum Nitride Ceramic Substrate Applications DC+ EV Chargers Solar G1 High-Efficiency Converters / Inverters S1 AC Motor & Traction Drives Smart-Grid / Grid-Tied Distributed Generation T1 G2 -t S2 T2 DC- System Benefits Enables Compact, Lightweight Systems Increased System Efficiency, due to Low Switching & Conduction Losses of SiC Reduced Thermal Requirements and System Cost Maximum Parameters (Verified by Design) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V Drain-Source Voltage 1200 DS max V Gate-Source Voltage, Maximum Value -8 +19 V Transient, <100 ns GS max Fig. 33 V Gate-Source Voltage, Recommended -4 +15 Static GS op DC Continuous Drain Current (T 150 C) 200 V = 15 V, T = 75C, T 150C VJ GS HS VJ I Note 1 D DC Continuous Drain Current (T 175 C) 200 V = 15 V, T = 75C, T 175C VJ GS HS VJ A I DC Source-Drain Current (Body Diode) 159 V = -4 V, T = 75C, T 175C SD BD GS HS VJ t limited by T Pmax VJ-max I Maximum Pulsed Drain Current 400 D (pulsed) V = 15 V, T = 75C GS HS -40 150 C Operation Maximum Virtual Junction Temperature T VJ op under Switching Conditions -40 175 C Intermittent with Reduced Life Note 1 DC continuous drain current, I , set by press-fit pin limit. D Rev. 0, 2021-11-08 CAB006A12GM3 4600 Silicon Dr., Durham, NC 27703 1 Copyright 2021 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, Wolfspeed, and the Wolfspeed logo are registered trademarks of Cree, Inc.MOSFET Characteristics (Per Position) (T = 25C unless otherwise specified) VJ Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V Drain-Source Breakdown Voltage 1200 V = 0 V, T = -40C (BR)DSS GS VJ 1.8 2.5 3.6 V V = V , I = 69 mA DS GS D V Gate Threshold Voltage GS(th) 2.1 V = V , I = 69 mA, T = 150C DS GS D VJ I Zero Gate Voltage Drain Current 6 114 V = 0 V, V = 1200 V DSS GS DS A I Gate-Source Leakage Current 0.06 1.5 V = 15 V, V = 0 V GSS GS DS 5.3 6.9 V = 15 V, I = 200 A GS D Fig. 2 Drain-Source On-State Resistance R 8.5 m V = 15 V, I = 200 A, T = 150C GS D VJ DS(on) (Devices Only) Fig. 3 9.6 V = 15 V, I = 200 A, T = 175C GS D VJ 162 V = 20 V, I = 200 A DS DS g Transconductance S Fig. 4 fs 145 V = 20 V, I = 200 A, T = 150C DS DS VJ Turn-On Switching Energy, T = 25C 4.76 VJ V = 600 V, E T = 125C 5.12 DD On VJ I = 200 A, T = 150C 5.41 VJ D Fig. 11 mJ V = -4 V/15 V, GS Fig. 13 Turn-Off Switching Energy, T = 25C 0.44 VJ R = 0.0 , R = 1.5 , G(OFF) G(ON) E T = 125C 0.45 Off VJ L = 40 H T = 150C 0.46 VJ R Internal Gate Resistance 1.12 f = 100 kHz, V = 25 mV G(int) AC C Input Capacitance 20.4 iss V = 0 V, V = 800 V, GS DS nF C Output Capacitance 0.79 Fig. 9 oss V = 25 mV, f = 100 kHz AC C Reverse Transfer Capacitance 43 pF rss Q Gate to Source Charge 240 GS V = 800 V, V = -4 V/15 V DS GS Q Gate to Drain Charge 204 nC I = 200 A GD D Per IEC60747-8-4 pg 21 Q Total Gate Charge 708 G FET Thermal Resistance, Junction to R 0.137 C/W Fig. 17 th JH Heatsink Rev. 0, 2021-11-08 CAB006A12GM3 4600 Silicon Dr., Durham, NC 27703 2 Copyright 2021 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, Wolfspeed, and the Wolfspeed logo are registered trademarks of Cree, Inc.

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
Wolfspeed / Cree
Wolfspeed(CREE)
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