V 1.2 kV CCS050M12CM2 DS 1.2kV, 25m All-Silicon Carbide E 1.7 mJ SW, Total 50A, 150 C Six-Pack (Three Phase) Module R 25 m DS(on) TM C2M MOSFET and Z-Rec Diode Features Package Ultra Low Loss Zero Reverse Recovery Current Zero Turn-off Tail Current High-Frequency Operation Positive Temperature Coefficient on V and V F DS(on) Cu Baseplate, AlN DBC System Benefits Enables Compact and Lightweight Systems High Efficiency Operation Ease of Transistor Gate Control Reduced Cooling Requirements Reduced System Cost Applications Solar Inverters Part Number Package Marking UPS and SMPS Induction Heating CCS050M12CM2 Six-Pack CCS050M12CM2 Regen Drives 3-Phase PFC Motor Drives Maximum Ratings (T = 25C unless otherwise specified) C Symbol Parameter Value Unit Test Conditions Notes V Drain - Source Voltage 1.2 kV DS Gate - Source Voltage -10/+25 V Absolute maximum values V GS V Gate - Source Voltage -5/+20 V Recommended operational values GS 87 V = 20 V, T = 25 C GS C I Continuous Drain Current A Fig. 26 D 59 V = 20 V, T = 90 C GS C I Pulsed Drain Current 250 A Pulse width t limited by T Fig. 28 jmax D(pulse) P 102 V = -5 V, T = 25 C GS C I Continuous Diode Forward Current A F 62 V = -5 V, T = 90 C GS C Non-Repetitive Diode Forward Surge V = -5 V, T = 110 C, t = 10 ms, GS C P I 400 A FSM Current Half Sine Pulse, T Junction Temperature -40 to +150 C J T ,T Case and Storage Temperature Range -40 to +125 C C STG V Case Isolation Voltage 5.0 kV AC, 50 Hz, 1 min isol L Stray Inductance 30 nH Measured from pins 25-26 to 27-28 Stray P Power Dissipation 312 W T = 25 C, T 150 C Fig. 27 C J D Subject to change without notice. 1 www.cree.com Datasheet: CCS050M12CM2,Rev. CElectrical Characteristics (T = 25C unless otherwise specified) C Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V Drain - Source Breakdown Voltage 1.2 kV V = 0 V, I = 250 A (BR)DSS GS, D 2.3 V = V I = 2.5 mA , D G D V Gate Threshold Voltage V GS(th) 1.6 V = 10 V I = 2.5 mA, T = 150 C DS , D J I Zero Gate Voltage Drain Current 2 250 A V = 1.2 kV, V = 0V DSS DS GS I Gate-Source Leakage Current 100 nA V = 25 V, V = 0V GSS DS GS 25 36 V = 20 V, I = 50 A GS DS Figs. R On State Resistance m DS(on) 4-7 43 63 V = 20 V, I = 50 A, T = 150 C GS DS J = 20 V I = 50 A 22 VDS , DS gfs Transconductance S Fig. 8 21 VDS = 20 V, ID = 50 A, TJ = 150 C C iss Input Capacitance 2.810 VDS = 800 V, VGS = 0 V Figs. C oss Output Capacitance 0.393 nF f = 1 MHz, V = 25 mV 16,17 AC C Reverse Transfer Capacitance 0.014 rss V = 600 V, V = +20V/-5V E DD GS on Turn-On Switching Energy 1.1 mJ I = 50 A, R = 20 D G Fig. 18 Load = 200 H TJ = 150 C E Turn-Off Switching Energy Off 0.6 mJ Note: IEC 60747-8-4 Definitions R Internal Gate Resistance 1.5 f = 1 MHz, V = 25 mV AC G (int) Q Gate-Source Charge 32 GS Q Gate-Drain Charge 30 nC V = 800 V, I = 50 A Fig. 15 GD DD D Q G Total Gate Charge 180 t Turn-on delay time 21 ns d(on) V = 800V, R = 8 DD LOAD t Rise time 30 ns r V = +20/-2V, R = 3.8 Figs. GS G 20-25 TJ = 25 C td(off ) Turn-off delay time 50 ns Note: IEC 60747-8-4 Definitions t Fall time 19 ns f 1.5 1.8 IF = 50 A, V = 0 GS Figs. V Diode Forward Voltage V SD 10-11 2.0 2.3 I = 50 A, T = 150 C F J Q C Total Capacitive Charge 0.28 C Thermal Characteristics Symbol Parameter Min. Typ. Max. Unit Test Conditions Note R Thermal Resistance Juction-to-Case for MOSFET 0.37 0.40 T = 90 C, P = 150 W c D thJCM C/W R Thermal Resistance Juction-to-Case for Diode 0.42 0.43 T = 90 C, P = 130 W c D thJCD NTC Characteristics Symbol Condition Typ. Max. Unit R T = 25 C 5 k 25 C Delta R/R T = 100 C, R = 481 5 % C 100 P T = 25 C mW 25 C B R = R exp B (1/T -1/(298.15K)) 3380 K 25/50 2 25 25/50 2 Additional Module Data Symbol Condition Max Unit Test Condition W Weight 180 g M Mounting Torque 5 Nm To heatsink CCS050M12CM2,Rev. C 2