V 1.2 kV CCS020M12CM2 DS 1.2kV, 80 m Silicon Carbide E 0.48 mJ sw, Total 20A, 150 C Six-Pack (Three Phase) Module R 80 m DS(on) C2M MOSFET and Z-Rec Diode Features Package Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Ease of Paralleling Copper Baseplate and Aluminum Nitride Insulator System Benefits Enables Compact and Lightweight Systems High Efficiency Operation Mitigates Over-voltage Protection Reduced Thermal Requirements Reduced System Cost Applications Part Number Package Marking Solar Inverter 3-Phase PFC Regen Drive CCS020M12CM2 Six-Pack CCS020M12CM2 UPS and SMPS Motor Drive Maximum Ratings (T = 25C unless otherwise specified) C Symbol Parameter Value Unit Test Conditions Notes V Drain - Source Voltage 1.2 kV DSmax V Gate - Source Voltage -10/+25 V Absolute maximum values GSmax V Gate - Source Voltage -5/20 V Recommended operational values GSop 29.5 V = 20 V, T = 25 C GS C I Continuous MOSFET Drain Current A Fig. 25 D 20 V = 20 V, T = 90 C GS C I Pulsed Drain Current 80 A Pulse width tp limited by T D(pulse) J(max) 46 VGS = -5 V, T = 25 C C I Continuous Diode Forward Current A F 27 V = -5 V, T = 90 C GS C T Junction Temperature -40 to +150 C Jmax T ,T Case and Storage Temperature Range -40 to +125 C C STG V Case Isolation Voltage 4.5 kV AC, 50 Hz , 1 min isol Measured between terminals 25, 26 and L Stray Inductance 30 nH Stray 27, 28 P Power Dissipation 167 W T C = 25 C, TJ = 150 C Fig. 26 D Subject to change without notice. 1 www.cree.com Datasheet: CCS020M12CM2,Rev. -Electrical Characteristics (T = 25C unless otherwise specified) C Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain - Source Breakdown Voltage 1.2 kV V = 0 V, I = 100 A GS, D 1.7 2.2 VDS = 10 V, ID = 1 mA V Gate Threshold Voltage V Fig. 7 GS(th) 1.6 V = 10 V I = 1 mA, T = 150 C DS , D J I Zero Gate Voltage Drain Current 1 100 A V = 1.2 kV, V = 0V DSS DS GS I Zero Gate Voltage Drain Current 10 250 A V = 1.2 kV, V = 0V,T = 150 C DSS DS GS J I Gate-Source Leakage Current 1 250 nA V = 20 V, V = 0V GSS DS GS 80 98 V = 20 V, I = 20 A GS DS Fig. R On State Resistance m DS(on) 4-6 145 208 V = 20 V, I = 20 A, T = 150 C GS DS J 9.8 V = 20 V I = 20 A DS , DS g Transconductance S Fig. 8 fs 8.5 VDS = 20 V, ID = 20 A, TJ = 150 C C iss Input Capacitance 900 f = 1 MHz, VDS = 800 V, Fig. C oss Output Capacitance 181 pF V = 25 mV 16,17 AC C Reverse Transfer Capacitance 5.9 rss V = 800 V, V = -5V/+20V E DD GS on Turn-On Switching Energy 0.41 mJ I = 20 A, R = 2.5 D G(ext) Fig. 22 Load = 412 H, T = 150 C J E Turn-Off Switching Energy Off 0.07 mJ Note: IEC 60747-8-4 Definitions R Internal Gate Resistance 3.8 f = 1 MHz, V = 25 mV AC G (int) Q GS Gate-Source Charge 16.1 V = 800 V, V = -5V/+20V, DD GS Q Gate-Drain Charge 20.7 nC Fig. 15 GD I = 20 A, Per JEDEC24 pg 27 D QG Total Gate Charge 61.5 t Turn-on delay time 10 ns V = 800V, V = -5/+20V, d(on) DD GS I = 20 A, R = 2.5 , D G(ext) t V fall time 90% to 10% 14 ns r(on) SD Timing relative to V Fig. 24 DS t d(off ) Turn-off delay time 22.4 ns Note: IEC 60747-8-4, pg 83 Resistive load t V rise time 10% to 90% 53 ns f(off ) SD 1.5 1.7 IF = 20 A, V = 0, TJ = 25 C Fig. 10 GS V Diode Forward Voltage V SD 1.8 2.3 I = 20 A, V = 0, T = 150 C Fig. 11 F J GS ISD = 20 A, V = 800V DS Q Total Capacitive Charge 0.27 C C di/dt = 1500 A/s, V = -5V GS Thermal Characteristics Symbol Parameter Min. Typ. Max. Unit Test Conditions Note R Thermal Resistance Juction-to-Case for MOSFET 0.7 0.75 Fig. 27 thJCM C/W R Thermal Resistance Juction-to-Case for Diode 0.8 0.85 Fig. 28 thJCD Additional Module Data Symbol Condition Max. Unit Test Condition W Weight 180 g M Mounting Torque 5.0 Nm To Heatsink and terminals Clearance Distance 14.09 mm Terminal to terminal 14.11 mm Terminal to terminal Creepage Distance 17.46 mm Terminal to baseplate CCS020M12CM2,Rev. - 2