V 900 V
DS
I @ 11.5 A
D
E3D08065G
R 280 m
DS(on)
Silicon Carbide Schottky Diode
E-Series Automotive
Features Package
TO-263-2
Applications
Part Number Package Marking
E3D08065G TO-263-2 E3D08065G
Maximum Ratings (T
C
Symbol Parameter Value Unit Test Conditions Note
V 650 V
RRM
V 650 V
R
T
22
C
I 10 A T
F C
8
T
C
102 T
C
W
44 T
C
31 T
C
I A
FRM
18 T
C
200 V =0-650V
R
T
J
+175
1 E3D08065G Rev 1, 10-2020Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
1.5 1.8 = 8 A, T
J
V V
2.2 2.4 = 8 A, T
J
10 51 V = 650 V, T
R J
A
R
12 204 V = 650 V, T
R J
Q 21 V = 8A, T
R J
369 V = 0 V, T
R J
39 V = 200 V, T
R J
36 V = 400 V, T
R J
E 3.2 V = 400 V
R
Thermal Characteristics
Symbol Parameter Typ. Unit
R 1.47
Typical Performance
20 30
18
T = -55C
J
25
T = 25C
J
16
T = 75C
J
T = 125C
J
14
20
T = 175C
J
12
T = 175 C
J
15
10
T = 125 C
J
8
T = 75 C
J
10
6
T = 25 C
J
4
5 T = -55 C
J
2
0
0
0 200 400 600 800 1000 1200
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Foward Voltage, V (V)
ReversVe V o(lVtag)e, V (V)
V (V) F
R R
F
2 E3D08065G Rev 1, 10-2020
I (A)
F
I ( A)
R