V 900 V
DS
I @ 25C 11.5 A
D
E4D20120D
R 280 m
DS(on)
Silicon Carbide Schottky Diode
E-Series Automotive
Features Package
4th Generation SiC Merged PIN Schottky Technology
Zero Reverse Recovery Current
High-Frequency Operation
Temperature-Independent Switching Behavior
AEC-Q101 Qualified and PPAP Capable
Humidity Resistant
Benefits TO-247-3
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Ideal for Outdoor Environments
Applications
Boost diodes in PFC or DC/DC stages
Part Number Package Marking
Free Wheeling Diodes in Inverter stages
AC/DC converters
E4D20120D TO-247-3 E4D20120
Automotive and Traction Power Conversion
PV Inverters
Maximum Ratings (T = 25 C unless otherwise specified)
C
Symbol Parameter Value Unit Test Conditions Note
V Repetitive Peak Reverse Voltage 1200 V
RRM
V DC Peak Reverse Voltage 1200 V
R
33/66 T =25C
C
I Continuous Forward Current 16/32 A T =100C Fig. 3
F C
10/20 T =155C
C
176 T =25C
C
P Power Dissipation W Fig. 4
tot
76 T =110C
C
45* T =25C, t =10 ms, Half Sine Pulse
C P
I Repetitive Peak Forward Surge Current A
FRM
26* T =110C, t =10 ms, Half Sine Pulse
C P
dV/dt Diode dV/dt ruggedness 250 V/ns V =0-960V
R
-55 to
T , T Operating Junction and Storage Temperature C
J stg
+175
* **
Per Leg, Per Device
1 E4D20120D Rev. A, 06-2020Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
1.5 1.8 I = 10 A T =25C
F J
V Forward Voltage V Fig. 1
F
2.2 I = 10 A T =175C
F J
30 200 V = 1200 V T =25C
R J
I Reverse Current A Fig. 2
R
55 V = 1200 V T =175C
R J
V = 800 V, I = 10A
R F
Q Total Capacitive Charge 50 nC Fig. 5
C
T = 25C
J
712 V = 0 V, T = 25C, f = 1 MHz
R J
C Total Capacitance 44 pF V = 400 V, T = 25C, f = 1 MHz Fig. 6
R J
32 V = 800 V, T = 25C, f = 1 MHz
R J
E Capacitance Stored Energy 14 J V = 800 V Fig. 7
C R
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter Typ. Unit Note
0.85*
R Thermal Resistance from Junction to Case C/W Fig. 8
JC
0.43**
* **
Per Leg, Per Device
Typical Performance
700
20
18
T = -55C
J
600
T = 25C
J
16
T = 75C
J
500
T = 125C
J
14
T = 175C
J
12
T = 175 C
400
J
10
T = 125 C
J
300
8
T = 75 C
J
6
200
T = 25 C
J
4
T = -55 C
J
100
2
0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
0 500 1000 1500 2000
Foward Voltage, V (V)
V (V) V (V)
F Reverse Voltage, V (V)
F R
R
Figure 1. Forward Characteristics Figure 2. Reverse Characteristics
2 E4D20120D Rev. A, 06-2020
Foward Current, I (A)
F
I (A)
F
Reverse Leakage Current, I (uA)
I (A) RR
R