V 1200 V
DS
I 300 A
WAB300M12BM3
DS
1200 V, 300 A All-Silicon Carbide
THB-80 Qualified, Switching Optimized, Half-Bridge Module
Technical Features Package 105mm x 61.5 mm x 31.4 mm
Industry Standard 62 mm Footprint
High Humidity Operation THB-80 (HV-H3TRB)
High Junction Temperature (175 C) Operation
Implements Switching Optimized Third Generation
SiC MOSFET Technology
Low Inductance (10.2 nH) Design
V+
Silicon Nitride Insulator and Copper Baseplate
G1
Applications
K1
Mid
Railway & Traction
Solar
G2
EV Chargers
K2
Industrial Automation & Testing
V-
System Benefits
Fast Time-to-Market with Minimal Development Required for Transition from 62mm Si IGBT Packages
Increased System Efficiency, due to Low Switching & Conduction Losses of SiC
High Reliability Material Selection
Key Parameters (T = 25C unless otherwise specified)
C
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V Drain-Source Voltage 1200
DS max
V Gate-Source Voltage, Maximum Value -8 +19 Transient, <100 ns
GS max
V
Fig. 32
Gate-Source Voltage, Recommended
V -4 +15 Static
GS op
Op. Value
382 V = 15 V, T = 25 C, T 175 C Fig. 20
GS C VJ
I DC Continuous Drain Current
DS
Note 1
270 V = 15 V, T = 90 C, T 175 C
GS C VJ
I DC Source-Drain Current 382 V = 15 V, T = 25 C, T 175 C
SD GS C VJ
A
I DC Source-Drain Current (Body Diode) 190 V = - 4 V, T = 25 C, T 175 C
SD BD GS C VJ
I Maximum Pulsed Drain-Source Current 600
DS (pulsed)
t limited by T
jmax
Pmax
V = 15 V, T = 25 C
I Maximum Pulsed Source-Drain Current 600 GS C
SD (pulsed)
Maximum Virtual Junction
T Temperature under Switching -40 175 C
VJ op
Conditions
Note 1 Assumes R = 0.16 W and R = 6.4 m. Calculate P = (T T ) / R . Calculate I = (P / R )
TH JC DS(on) D VJ C TH JC D_MAX D DS(on)
Rev. A, 2020-05-20 WAB300M12BM3 4600 Silicon Dr., Durham, NC 27703
1 Copyright 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, Wolfspeed, and the Wolfspeed logo
are registered trademarks of Cree, Inc.MOSFET Characteristics (Per Position) (T = 25C unless otherwise specified)
VJ
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V Drain-Source Breakdown Voltage 1200 V = 0 V, T = -40 C
(BR)DSS GS
VJ
1.8 2.5 3.6 V = V , I = 92 mA
V DS GS D
V Gate Threshold Voltage
GS(th)
2.0 V = V , I = 92 mA, T = 175 C
DS GS D VJ
I Zero Gate Voltage Drain Current 10 150 V = 0 V, V = 1200 V
DSS GS DS
A
I Gate-Source Leakage Current 0.05 1 V = 15 V, V = 0 V
GSS GS DS
4.0 5.2 V = 15 V, I = 300 A
GS D
Drain-Source On-State Resistance (Devices Fig. 2
R m
DS(on)
Only) Fig. 3
6.4 V = 15 V, I = 300 A, T = 175 C
GS D VJ
212 V = 20 V, I = 300 A
DS DS
g Transconductance S Fig. 4
fs
200 V = 20 V, I = 300 A, T = 175 C
DS DS VJ
Turn-On Switching Energy, T = 25 C 4.75
J
V = 600 V,
E T = 125 C 5.33 DS
On J
I = 300A,
T = 175 C 5.88
J
D
Fig. 11
mJ V = -4 V/15 V,
GS
Fig. 13
Turn-Off Switching Energy, T = 25 C 4.99
J
R = 2.0 ,
G(ext)
E T = 125 C 5.23
Off J
L= 20.7 H
T = 175 C 5.30
J
R Internal Gate Resistance 1.4 T = 25 C
G(int) VJ
C Input Capacitance 24.5
iss
V = 0 V, V = 1000 V,
GS DS
nF
C Output Capacitance 0.97 Fig. 9
oss
V = 25 mV, f = 100 kHz
AC
C Reverse Transfer Capacitance 50 pF
rss
Q Gate to Source Charge 256
GS
V = 800 V, V = -4 V/15 V
DS GS
Q Gate to Drain Charge 308 nC I = 400 A
GD D
Per IEC60747-8-4 pg 21
Q Total Gate Charge 908
G
R FET Thermal Resistance, Junction to Case 0.16 0.18 C/W Fig. 17
th JC
Body Diode Characteristics (Per Position) (T = 25C unless otherwise specified)
VJ
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
6.0 V = -4 V, I = 300 A
GS SD
V Body Diode Forward Voltage V Fig. 7
SD
5.5 V = -4 V, I = 300 A, T = 175 C
GS SD J
t Reverse Recovery Time 36.5 ns
RR
V = -4 V, I = 300 A, V = 600 V
GS SD R
Q Reverse Recovery Charge 7.3 C
RR
di /dt = 14.5 A/ns, T = 175 C
F J
I Peak Reverse Recovery Current 323 A
RRM
Reverse Recovery Energy T = 25 C 0.65 V = 600 V, I = 300A,
J DS
D
E T = 125 C 1.98 mJ V = -4 V/15 V, R = 2.0 , Fig. 14
J GS
RR G(ext)
T = 175 C 3.01 L= 20.7 H
J
Rev. A, 2020-05-20 WAB300M12BM3 4600 Silicon Dr., Durham, NC 27703
2 Copyright 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, Wolfspeed, and the Wolfspeed logo
are registered trademarks of Cree, Inc.