V 1200 V
DS
I 400 A
WAB400M12BM3
DS
1200 V, 400 A All-Silicon Carbide
THB-80 Qualified, Conduction Optimized, Half-Bridge Module
Technical Features Package 105mm x 61.5 mm x 31.4 mm
Industry Standard 62mm Footprint
High Humidity Operation THB-80 (HV-H3TRB)
High Junction Temperature (175 C) Operation
Implements Conduction Optimized Third
Generation SiC MOSFET Technology
Low Inductance (10.2 nH) Design
V+
Silicon Nitride Insulator and Copper Baseplate
G1
Applications
K1
Mid
Railway & Traction
Solar
G2
EV Chargers
K2
Industrial Automation & Testing
V-
System Benefits
Fast Time-to-Market with Minimal Development Required for Transition from 62mm Si IGBT Packages
Increased System Efficiency due to Low Switching & Conduction Losses of SiC
High Reliability Material Selection
Key Parameters (T = 25C unless otherwise specified)
C
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V Drain-Source Voltage 1200
DS max
V Gate-Source Voltage, Maximum Value -8 +19 Transient, <100 ns
GS max
V
Fig. 32
Gate-Source Voltage, Recommended
V -4 +15 Static
GS op
Operating Value
468 V = 15 V, T = 25 C, T 175 C Fig. 20
GS C VJ
I DC Continuous Drain Current
DS
Note 1
353 V = 15 V, T = 90 C, T 175 C
GS C VJ
I DC Source-Drain Current 468 V = 15 V, T = 25 C, T 175 C
SD GS C VJ
A
I DC Source-Drain Current (Body Diode) 262 V = - 4 V, T = 25 C, T 175 C
SD BD GS C VJ
I Maximum Pulsed Drain-Source Current 800
DS (pulsed)
t limited by T
jmax
Pmax
V = 15 V, T = 25 C
I Maximum Pulsed Source-Drain Current 800 GS C
SD (pulsed)
Maximum Virtual Junction
T Temperature under Switching -40 175 C
VJ op
Conditions
Note 1 Assumes R = 0.13C/W and R = 5.25 m. Calculate P = (T T ) / R . Calculate I = (P / R )
TH JC DS(on) D VJ C TH JC D_MAX D DS(on)
Rev. A, 2020-05-22 WAB400M12BM3 4600 Silicon Dr., Durham, NC 27703
1 Copyright 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, Wolfspeed, and the Wolfspeed logo
are registered trademarks of Cree, Inc.MOSFET Characteristics (Per Position) (T = 25C unless otherwise specified)
VJ
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V Drain-Source Breakdown Voltage 1200 V = 0 V, T = -40 C
(BR)DSS GS
VJ
1.8 2.5 3.6 V = V , I = 106 mA
V DS GS D
V Gate Threshold Voltage
GS(th)
2.0 V = V , I = 106 mA, T = 175 C
DS GS D VJ
I Zero Gate Voltage Drain Current 10 200 V = 0 V, V = 1200 V
DSS GS DS
A
I Gate-Source Leakage Current 0.04 1 V = 15 V, V = 0 V
GSS GS DS
3.25 4.25 V = 15 V, I = 400 A
GS D
Drain-Source On-State Resistance (Devices Fig. 2
R m
DS(on)
Only) Fig. 3
5.25 V = 15 V, I = 400 A, T = 175 C
GS D VJ
290 V = 20 V, I = 400 A
DS DS
g Transconductance S Fig. 4
fs
273 V = 20 V, I = 400 A, T = 175 C
DS DS VJ
Turn-On Switching Energy, T = 25 C 13.2
J
V = 600 V,
E T = 125 C 12.9 DS
On J
I = 400A,
T = 175 C 14.3
J
D
Fig. 11
mJ V = -4 V/15 V,
GS
Fig. 13
Turn-Off Switching Energy, T = 25 C 11.3
J R = 3.0 ,
G(ext)
E T = 125 C 12.0
Off J L= 13.6 H
T = 175 C 12.6
J
R Internal Gate Resistance 2.68 T = 25 C
G(int) VJ
C Input Capacitance 29.7
iss
V = 0 V, V = 800 V,
GS DS
nF
C Output Capacitance 1.18 Fig. 9
oss
V = 25 mV, f = 100 kHz
AC
C Reverse Transfer Capacitance 62.5 pF
rss
Q Gate to Source Charge 308
GS
V = 800 V, V = -4 V/15 V
DS GS
Q Gate to Drain Charge 380 nC I = 400 A
GD D
Per IEC60747-8-4 pg 21
Q Total Gate Charge 1040
G
R FET Thermal Resistance, Junction to Case 0.13 0.15 C/W Fig. 17
th JC
Body Diode Characteristics (Per Position) (T = 25C unless otherwise specified)
VJ
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
5.4 V = -4 V, I = 400 A
GS SD
V Body Diode Forward Voltage V Fig. 7
SD
4.9 V = -4 V, I = 400 A, T = 175 C
GS SD VJ
t Reverse Recovery Time 48.6 ns
RR
V = -4 V, I = 400 A, V = 600 V
GS SD R
Q Reverse Recovery Charge 7.6 C
RR
di/dt = 10.0 A/ns, T = 175 C
J
I Peak Reverse Recovery Current 265 A
RRM
Reverse Recovery Energy T = 25 C 0.36 V = 600 V, I = 400A,
J DS
D
E T = 125 C 1.33 mJ V = -4 V/15 V, R = 3.0 , Fig. 14
J GS
RR G(ext)
T = 175 C 2.28 L= 13.6 H
J
Rev. A, 2020-05-22 WAB400M12BM3 4600 Silicon Dr., Durham, NC 27703
2 Copyright 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, Wolfspeed, and the Wolfspeed logo
are registered trademarks of Cree, Inc.