X-On Electronics has gained recognition as a prominent supplier of FH3060G6 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FH3060G6 MOSFETs are a product manufactured by Xinfeihong. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FH3060G6 Xinfeihong

FH3060G6 electronic component of Xinfeihong
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See Product Specifications
Part No.FH3060G6
Manufacturer: Xinfeihong
Category: MOSFETs
Description: DFN-8-EP(3.3x3.3) MOSFETs ROHS
Datasheet: FH3060G6 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.1959 ea
Line Total: USD 0.98 
Availability - 0
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
0
Ship by Tue. 07 Jan to Fri. 10 Jan
MOQ : 5
Multiples : 5
5 : USD 0.1959
50 : USD 0.1557
150 : USD 0.1385
500 : USD 0.117
2500 : USD 0.1074
5000 : USD 0.1016

   
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FH3060G6 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FH3060G6 and other electronic components in the MOSFETs category and beyond.

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The FH3060G6 with DFN-8-EP(3.3x3.3) is a MOSFET manufactured by Xinfeihong that is RoHS compliant. It is a 60V N-Channel MOSFET-based device with a maximum drain current (I D ) of 30A and a maximum power dissipation of 4.1W. The FH3060G6 has a Package-PowerRise 0.55O (typical) Drain-SourceOn-Resistance (RDS(ON)). It has a low gate threshold voltage of 2.5V (max) and a breakdown voltage of 60V (max). The FH3060G6 features an enhanced gate oxide design that is suitable for high frequency switching applications. It also has low input capacitance and gate charge which contributes to a fast switching performance.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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