BFP640ESD Surface mount robust silicon NPN RF bipolar transistor Product description The BFP640ESD is a RF bipolar transistor based on SiGe:C technology that is part of Infineons established sixth generation transistor family. Its ESD structure, high RF gain and low noise figure characteristics make the device suitable for a wide range of wireless applications. It remains cost competitive without compromising on ease of use. Feature list Minimum noise figure NF = 0.8 dB at 3.5 GHz, 3 V, 6 mA min High gain G = 19 dB at 3.5 GHz, 3 V, 30 mA ma OIP = 26.5 dBm at 3.5 GHz, 3 V, 30 mA 3 High ESD robustness, typical 2 kV (HBM) Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications Low noise amplifiers (LNAs) in GNSS receivers LNAs in satellite radio (SDARs, DAB) receivers LNAs in multimedia applications such as CATV and FM radio Device information Table 1 Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel BFP640ESD / BFP640ESDH6327XTSA1 SOT343 1 = B 2 = E 3 = C 4 = E T4s 3000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document Revision 2.0 www.infineon.com 2019-01-25BFP640ESD Surface mount robust silicon NPN RF bipolar transistor Table of contents Table of contents Product description 1 Feature list . 1 Product validation . 1 Potential applications 1 Device information . 1 Table of contents . 2 1 Absolute maximum ratings 3 2 Thermal characteristics . 4 3 Electrical characteristics 5 3.1 DC characteristics . 5 3.2 General AC characteristics 5 3.3 Frequency dependent AC characteristics .6 3.4 Characteristic DC diagrams 10 3.5 Characteristic AC diagrams 13 4 Package information SOT343 .19 Revision history . 20 Disclaimer 21 Datasheet 2 Revision 2.0 2019-01-25