About IGBT Transistors

Infineon IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IRG4PH30KPBF


International Rectifier IGBT Transistors 1200V ULTRAFAST 4-20KHZ DSCRETE IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 1.8831
Multiples of: 1

Single1.2 kV3.1 V+/- 20 V20 A 100 W TO - 247TubeSiThrough Hole100 W- 55 C+ 150 C 
IRGB4061DPBF


IGBT Transistors 600V UltraFast Trench IGBT
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Infineon Availability : 0
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USD 1.8831
Multiples of: 1

Single600 V1.95 V+/- 20 V36 A 206 W TO - 220 - 3TubeSiThrough Hole206 W- 55 C+ 175 C 
IRG4BC30UDPBF


Transistor: IGBT; 600V; 23A; 100W; TO220AB
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Infineon Availability : 0
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USD 1.8943
Multiples of: 70

Single600 V2.1 V+/- 20 V23 A100 nA100 W TO - 220 - 3TubeSiThrough Hole100 W- 55 C+ 150 C 
IRG7PH30K10PBF


IGBT Transistors Trnch IGBT 1200V 10A single IGBT
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Infineon Availability : 0
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USD 1.9223
Multiples of: 1

Single1.2 kV2.35 V+/- 30 V33 A100 nA210 W TO - 247TubeSiThrough Hole210 W- 55 C+ 175 C 
IRGB10B60KDPBF


IGBT Transistors 600V UltraFast 10-30kHz
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Infineon Availability : 0
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USD 1.963
Multiples of: 1

Single600 V2.2 V+/- 20 V22 A100 nA104 W TO - 220 - 3TubeSiThrough Hole156 W- 55 C+ 150 C 
IRGSL15B60KDPBF


IGBT Transistors IGBT DISCRETES
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 1.963
Multiples of: 1

Single600 V2.2 V+/- 20 V31 A   TO - 262 - 3TubeSiThrough Hole139 W- 55 C+ 150 C 
AIGB30N65H5ATMA1


IGBT Transistors DISCRETE SWITCHES
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Infineon Availability : 0
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USD 1.9723
Multiples of: 1

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IRG4BC40SPBF


IGBT Transistors 600V DC-1 KHZ (STD) DISCRETE IGBT
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Infineon Availability : 0
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USD 1.9834
Multiples of: 1

Single600 V1.5 V+/- 20 V60 A 160 W TO - 220 - 3Tube Through Hole - 55 C+ 150 C 
IRG4PC40UPBF


IGBT Transistors 600V UltraFast 8-60kHz
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Infineon Availability : 0
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USD 1.9896
Multiples of: 234

Single600 V2.1 V+/- 20 V40 A 160 W TO - 247TubeSiThrough Hole160 W- 55 C  
IRGP4086PBF


IGBT Transistors 300V 40A Ultra Fast
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Infineon Availability : 0
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USD 1.9984
Multiples of: 1

Single300 V2.1 V+/- 20 V70 A 160 W TO - 247TubeSiThrough Hole160 W- 40 C  
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