About IGBT Transistors

Infineon IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
AUIRGS4062D1


Transistor: IGBT; IGBT Trench; 600V; 39A; 123W; D2PAK
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Infineon Availability : 0
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USD 3.3868
Multiples of: 1

      123 W   Igbt Trench     
IGZ75N65H5


IGBT Transistors INDUSTRY 14
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USD 3.3875
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IRG4PH40UPBF


International Rectifier IGBT Transistors 1200V UltraFast 5-40kHz
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USD 3.4063
Multiples of: 1

Single1.2 kV3.5 V+/- 20 V30 A 160 W TO - 247TubeSiThrough Hole160 W- 55 C  
IKP30N65F5XKSA1


IGBT Transistors INDUSTRY 14
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Infineon Availability : 0
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USD 3.4254
Multiples of: 1

         Tube      
IRG4PC50UDPBF


Transistor: IGBT; 600V; 55A; 200W; TO247-3
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USD 3.4473
Multiples of: 1

Single600 V2 V+/- 20 V55 A 200 W TO - 247TubeSiThrough Hole200 W- 55 C  
IHW40N120R3FKSA1


Infineon Technologies IGBT Transistors IGBT PRODUCTS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 3.4542
Multiples of: 5

         Tube     Ihw40n120
IRG4PH50KDPBF


International Rectifier IGBT Transistors 1200V ULTRAFAST 4-20 KHZ COPACK IGBT
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Infineon Availability : 0
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USD 3.5383
Multiples of: 1

Single1.2 kV3.5 V+/- 20 V45 A 200 W TO - 247TubeSiThrough Hole200 W- 55 C+ 150 C 
IRGP30B60KD-EP


Transistor: IGBT; 600V; 60A; 304W; TO247-3
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USD 3.5894
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Single600 V2.35 V+/- 20 V60 A 304 W TO - 247TubeSiThrough Hole304 W- 55 C  
IRGP4263-EPBF


International Rectifier IGBT Transistors IR IGBT 600V 650V 48A TO-247AD
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USD 3.6036
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         TubeSi     
IRG7PH35UD-EP


IGBT Transistors IGBT DISCRETES
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Infineon Availability : 0
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USD 3.6252
Multiples of: 25

 1.2 kV2.2 V 50 A   TO - 247 - 3TubeSiThrough Hole180 W   
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