About IGBT Transistors

Infineon IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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First...8182838485...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
AUIRGP65G40D0


Trans IGBT Chip N-CH 600V 62A Tube
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 8.501
Multiples of: 25

                
AUIRGP4062D-E


IGBT Transistors 600V Auto UltraFast Copack Trench IGBT
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Infineon Availability : 0
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USD 8.5307
Multiples of: 1

      250 W         
IRGP4690DPBF


IGBT Transistors 600V TRENCH IGBT ULTRAFAST
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USD 8.607
Multiples of: 1

Single600 V2.1 V+/- 20 V140 A200 nA  TO - 247AC - 3Tube Through Hole454 W- 55 C+ 175 C 
IKW75N60TA


Infineon Technologies IGBT Transistors 600V 75A 100nA
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USD 8.7307
Multiples of: 1

Single600 V1.95 V20 V75 A100 nA  TO - 247TubeSiThrough Hole428 W- 40 C+ 150 CIkw75n60
IRG7PSH50UDPBF


International Rectifier IGBT Transistors
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USD 9.009
Multiples of: 1

Single1.2 kV2 V+/- 30 V116 A+/- 200 nA  TO - 274AA - 3TubeSiThrough Hole462 W- 55 C+ 150 C 
IRGP4066D-EPBF


International Rectifier IGBT Transistors 600V UltraFast Trench IGBT
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Infineon Availability : 0
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USD 9.0663
Multiples of: 1

Single600 V2.1 V+/- 20 V140 A 454 W TO - 247ADTubeSiThrough Hole454 W- 55 C  
IRGP50B60PD1PBF


IGBT Transistors 600V Warp2 150kHz
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USD 9.0788
Multiples of: 1

Single600 V2.35 V+/- 20 V75 A 390 W TO - 247TubeSiThrough Hole390 W- 55 C  
IRG8P50N120KD-EPBF


International Rectifier IGBT Transistors 1200V IGBT GEN8
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USD 9.2
Multiples of: 1

Single1200 V1.7 V30 V80 A300 nA  TO - 247AD - 3TubeSiThrough Hole350 W- 40 C+ 150 C 
SKW25N120FKSA1


IGBT Transistors IGBT PRODUCTS
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Infineon Availability : 0
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USD 9.2011
Multiples of: 30

        TO - 247 - 3Tube      
IKY50N120CH3XKSA1


IGBT Transistors INDUSTRY 14
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USD 9.2371
Multiples of: 1

Single1200 V2 V20 V100 A100 nA  TO 247 - 4 - 2TubeSiThrough Hole652 W- 40 C+ 175 C 
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