About IGBT Transistors

Ixys IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXGH32N170


IGBT Transistors 72 Amps 1700 V 3.3 V Rds
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IXYS Availability : 9
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USD 16.6104

Multiples of: 1

Single1700 V 20 V    TO - 247AD - 3TubeSiThrough Hole - 55 C+ 150 CIxgh32n170
IXBT2N250


IGBT Transistors IGBT BIMSFT-VERYHIVOLT
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IXYS Availability : 9
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USD 22.5766

Multiples of: 1

Single2.5 kV3.15 V20 V5 A+/- 100 nA  TO - 247 - 3TubeSiThrough Hole32 W- 55 C+ 150 CPlanar
IXA30PG1200DHGLB


IGBT Transistors XPT IGBT Phaseleg
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IXYS Availability : 8
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USD 15.9756

Multiples of: 1

Single1200 V1.9 V20 V43 A500 nA  ISOPLUS - 9 SiSmd/Smt150 W- 55 C+ 150 CIxa30pg1200dhglb
IXBT16N170A


IGBT Transistors 1700V 16A
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IXYS Availability : 8
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USD 17.2466

Multiples of: 1

Single1700 V 20 V    TO - 268 - 3TubeSiSmd/Smt150 W- 55 C+ 150 CIxbt16n170
IXGH24N170


IGBT Transistors 50 Amps 1700V 3.3 V Rds
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IXYS Availability : 8
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USD 20.0922

Multiples of: 1

Single1.7 kV2.5 V20 V50 A100 nA  TO - 247AD - 3TubeSiThrough Hole250 W- 55 C+ 150 CIxgh24n170
IXBX75N170A


IGBT Transistors 65Amps 1700V
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IXYS Availability : 7
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USD 76.2378

Multiples of: 1

        PLUS 247 - 3TubeSiThrough Hole   Ixbx75n170
IXYH50N120C3D1


IGBT Transistors XPT 1200V IGBT GenX6 XPT IGBT
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IXYS Availability : 6
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USD 12.4201

Multiples of: 1

Single1200 V4.2 V30 V90 A100 nA  TO - 247AD - 3TubeSiThrough Hole625 W- 55 C+ 150 CIxyh50n120
IXXH60N65B4H1


IGBT Transistors 650V/106A TRENCH IGBT GENX4 XPT
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IXYS Availability : 4
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USD 12.6822

Multiples of: 1

Single650 V1.7 V20 V116 A100 nA  TO - 247AD - 3TubeSiThrough Hole380 W- 55 C+ 175 CIxxh60n65
IXBN42N170A


IGBT Transistors 42 Amps 1700V 6.0 V Rds
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IXYS Availability : 3
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USD 47.2334

Multiples of: 1

Single1700 V 20 V    SOT - 227B - 4TubeSiSmd/Smt - 55 C+ 150 CIxbn42n170
IXYH30N170C


IGBT Transistors 1700V/108A High Voltage XPT IGBT
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IXYS Availability : 2
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USD 18.4601

Multiples of: 1

        TO - 247AD - 3TubeSiThrough Hole   High Voltage
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