About IGBT Transistors

On Semiconductor IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
NGTB45N60S1WG


ON Semiconductor IGBT Transistors FSII 45A 600V Welding
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USD 2.0652
Multiples of: 211

Single600 V2 V+/- 20 V90 A200 nA  TO - 247 - 3TubeSiThrough Hole300 W- 55 C+ 175 C 
FGH15T120SMD_F155


IGBT Transistors 1200V, 15A, Field Stop Trench IGBT
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ON Semiconductor Availability : 0
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USD 2.074
Multiples of: 3

Single1200 V1.9 V+/- 25 V30 A400 nA333 W TO - 247G03 - 3TubeSiThrough Hole333 W- 55 C+ 175 CFgh15t120
FGH40N65UFDTU


IGBT Transistors N-ch / 40A 650V
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ON Semiconductor Availability : 0
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USD 2.0993
Multiples of: 1

Single650 V +/- 20 V    TO - 247AB - 3TubeSiThrough Hole - 55 C+ 150 CFgh40n65ufd
FGA25N120ANTDTU_F109


IGBT Transistors Copak Discrete
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USD 2.1076
Multiples of: 1

Single1200 V +/- 20 V    TO - 3PN - 3TubeSiThrough Hole - 55 C+ 150 CFga25n120antdtu
HGTP20N60A4


Transistor: IGBT; 600V; 40A; 290W; TO220
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ON Semiconductor Availability : 0
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USD 2.1245
Multiples of: 12

      290 W         
NGTB25N120SWG


ON Semiconductor IGBT Transistors FSII 25A 1200V Welding
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ON Semiconductor Availability : 0
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USD 2.1247
Multiples of: 1

Single1.2 kV2 V+/- 20 V50 A200 nA  TO - 247 - 3TubeSiThrough Hole385 W- 55 C+ 175 C 
FGA60N60UFDTU


Fairchild Semiconductor IGBT Transistors 600V 60A FIELD STOP
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ON Semiconductor Availability : 0
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USD 2.1446
Multiples of: 1

Single600 V +/- 20 V120 A    TubeSiThrough Hole - 55 C+ 150 CFga60n60ufdtu
NGTG25N120FL2WG


ON Semiconductor IGBT Transistors 1200V25 FAST IGBT ONLY F
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USD 2.1453
Multiples of: 1

         TubeSi     
FGH80N60FDTU


Transistor: IGBT; 600V; 40A; 116W; TO247
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USD 2.2003
Multiples of: 10

      116 W         
HGTG20N60A4D


Transistor: IGBT; 600V; 40A; 190W; TO247
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USD 2.2366
Multiples of: 1

                
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