About IGBT Transistors

Microchip IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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APT35GN120BG


IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Single
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Microchip Availability : 98
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USD 8.2225

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Single1.2 kV1.7 V30 V94 A600 nA379 W TO - 247 - 3TubeSiThrough Hole379 W- 55 C+ 150 C 
APT20GF120BRDG


IGBT Transistors FG, IGBT, 1200V, 20A, TO-247, RoHS
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Microchip Availability : 95
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USD 7.26

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          NPT     
APT35GP120BG


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single
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Microchip Availability : 87
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USD 15.6285

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      543 W   POWER MOS 7®, PT     
APT15GN120BDQ1G


IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi
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Microchip Availability : 83
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USD 8.1173

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      195 W   Field Stop     
APT33GF120BRG


IGBT Transistors Insulated Gate Bipolar Transistor - NPT Low Frequency - Single
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Microchip Availability : 82
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USD 8.947

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Single1.2 kV2.5 V30 V52 A100 nA  TO - 247 - 3TubeSiThrough Hole297 W- 55 C+ 150 C 
APT15GP90BDQ1G


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi
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Microchip Availability : 79
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USD 7.462

Multiples of: 1

      250 W   POWER MOS 7®, PT     
APT54GA60B


IGBT Transistors FG, IGBT, 600V, TO-247
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Microchip Availability : 78
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USD 7.5116

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      416 W   POWER MOS 8®, PT     
APT50GF120LRG


IGBT Modules Insulated Gate Bipolar Transistor - NPT Low Frequency - Single
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Microchip Availability : 76
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USD 22.3166

Multiples of: 1

Single1.2 kV2.5 V+/- 30 V135 A+/- 100 nA  TO - 264 - 3Tube Through Hole781 W- 55 C+ 150 C 
APT54GA60BD30


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Combi
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Microchip Availability : 75
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USD 9.0623

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Single600 V2 V+/- 30 V96 A+/- 100 nA  TO - 247 - 3BulkSiThrough Hole416 W- 55 C+ 150 C 
APT95GR65B2


IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
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Microchip Availability : 75
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USD 9.24

Multiples of: 1

Single650 V +/- 30 V208 A+/- 250 nA  TO - 247 - 3TubeSiThrough Hole892 W- 55 C+ 150 C 
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