TYPICAL PERFORMANCE CURVES APT50GF120B2 LR(G) 1200V APT50GF120B2R APT50GF120LR APT50GF120B2RG* APT50GF120LRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. (B2) FAST IGBT T-Max TO-264 The Fast IGBT is a new generation of high voltage power IGBTs. Using (L) Non-Punch through technology, the Fast IGBToffers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop High Freq. Switching to 20KHz RBSOA and SCSOA Rated Ultra Low Leakage Current C Intergrated Gate Resistor: Low EMI, High Reliability G E MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specied. C Symbol Parameter UNIT APT50GF120B2 LR(G) V Collector-Emitter Voltage 1200 CES Volts V Gate-Emitter Voltage 30 GE 7 I Continuous Collector Current T = 25C 135 C1 C I Continuous Collector Current T = 100C 75 Amps C2 C 1 I Pulsed Collector Current 150 CM Switching Safe Operating Area T = 150C SSOA 150A 1200V J P Total Power Dissipation Watts 781 D T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. L 300 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX Units V Collector-Emitter Breakdown Voltage (V = 0V, I = 500A) 1200 (BR)CES GE C V Gate Threshold Voltage (V = V , I = 700A, T = 25C) 4.5 5.5 6.5 GE(TH) CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 50A, T = 25C) 2.5 3.0 GE C j V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 50A, T = 125C) 3.1 GE C j 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 25C) 100 CE GE j I A CES 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 125C) 1000 CE GE j I Gate-Emitter Leakage Current (V = 20V) 100 nA GES GE R 5 Intergrated Gate Resistor G(int) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT50GF120B2 LR(G) Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance Capacitance 3460 ies C pF Output Capacitance V = 0V, V = 25V 385 oes GE CE C f = 1 MHz Reverse Transfer Capacitance res 225 V V Gate-to-Emitter Plateau Voltage Gate Charge 9.5 GEP 3 Q V = 15V Total Gate Charge 340 g GE V = 600V Q nC Gate-Emitter Charge CE 30 ge I = 50A Q C Gate-Collector Mille) Charge 205 gc 7 T = 150C, R = 1.0, V = J G GE Switching Safe Operating Area SSOA 150 A 15V, L = 100H,V = 1200V CE t Inductive Switching (25C) Turn-on Delay Time 25 d(on) V = 800V t Current Rise Time 43 CC r ns t V = 15V 260 Turn-off Delay Time d(off) GE I = 50A t C 70 Current Fall Time f 7 R = 1.0 4 G E Turn-on Switching Energy 3600 on1 T = +25C 5 J E J Turn-on Switching Energy (With Diode) 4675 on2 6 E Turn-off Switching Energy 2640 off t Inductive Switching (125C) Turn-on Delay Time 25 d(on) t V = 800V Current Rise Time 43 r CC ns V = 15V t Turn-off Delay Time GE 300 d(off) I = 50A t C Current Fall Time 95 f 7 R = 1.0 4 4 G E 3750 Turn-on Switching Energy on1 T = +125C 55 J E 6400 J Turn-on Switching Energy (With Diode) on2 6 E 3400 Turn-off Switching Energy off THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic UNIT MIN TYP MAX R Junction to Case (IGBT) .16 JC C/W R Junction to Case (DIODE) N/A JC W Package Weight gm 6.1 T 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I includes both IGBT and diode leakages ces 3 See MIL-STD-750 Method 3471. 4 E is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current on1 adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in gure 21, but with a Silicon Carbide diode. 5 E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching on2 loss. (See Figures 21, 22.) 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) off 7 R is external gate resistance, not including R nor gate driver impedance. (MIC4452) G G(int) Mircosemi Reserves the right to change, without notice, the specications and information contained herein. 052-6216 Rev E 5-2006