TO-247 TYPICAL PERFORMANCE CURVES APT15GN120BD SDQ1(G) APT15GN120BDQ1 APT15GN120SDQ1 APT15GN120BDQ1(G) APT15GN120SDQ1(G) 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT s have ultra (B) low V and are ideal for low frequency applications that require absolute minimum CE(ON) 3 conduction loss. Easy paralleling is a result of very tight parameter distribution and a D PAK slightly positive V temperature coef cient. Low gate charge simpli es gate drive CE(ON) (S) design and minimizes losses. C G E G C 1200V Field Stop E Trench Gate: Low V CE(on) Easy Paralleling C G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS All Ratings: T = 25C unless otherwise speci ed. C Parameter Symbol UNIT APT15GN120BD SDQ1(G) V Collector-Emitter Voltage 1200 CES Volts V Gate-Emitter Voltage 30 GE I Continuous Collector Current T = 25C 45 C1 C I Continuous Collector Current T = 110C 22 Amps C2 C 1 Pulsed Collector Current I 45 CM Switching Safe Operating Area T = 150C SSOA 45A 1200V J P Total Power Dissipation Watts 195 D T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX Units V Collector-Emitter Breakdown Voltage (V = 0V, I = 0.5mA) 1200 (BR)CES GE C V Gate Threshold Voltage (V = V , I = 600A, T = 25C) 5.0 5.8 6.5 GE(TH) CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 15A, T = 25C) 1.4 1.7 2.1 GE C j V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 15A, T = 125C) 2.0 GE C j 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 25C) 200 CE GE j I A CES 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 125C) TBD CE GE j I Gate-Emitter Leakage Current (V = 20V) nA 120 GES GE R Intergrated Gate Resistor N/A GINT CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - DYNAMIC CHARACTERISTICS APT15GN120BD SDQ1(G) Characteristic Test Conditions Symbol MIN TYP MAX UNIT C Input Capacitance 1200 Capacitance ies C Output Capacitance 65 pF V = 0V, V = 25V oes GE CE C f = 1 MHz Reverse Transfer Capacitance 50 res V Gate-to-Emitter Plateau Voltage Gate Charge 9.0 V GEP 3 Q V = 15V Total Gate Charge 90 g GE V = 600V Q Gate-Emitter Charge 5 nC CE ge I = 15A Q Gate-Collector Mille) Charge C 55 gc 7 T = 150C, R = 4.3 , V = J G GE 45 SSOA Switching Safe Operating Area A 15V, L = 100H,V = 1200V CE t Inductive Switching (25C) 10 Turn-on Delay Time d(on) t V = 800V 9 Current Rise Time r CC ns V = 15V t 150 Turn-off Delay Time GE d(off) I = 15A t C 110 f Current Fall Time 7 R = 4.3 4 E G 410 Turn-on Switching Energy on1 T = +25C J E 5 J 730 on2 Turn-on Switching Energy (Diode) 6 E Turn-off Switching Energy 950 off t Inductive Switching (125C) Turn-on Delay Time 10 d(on) t V = 800V Current Rise Time 9 r CC ns t V = 15V Turn-off Delay Time d(off) GE 170 I = 15A t Current Fall Time C 185 f 7 R = 4.3 4 4 E G 475 Turn-on Switching Energy on1 T = +125C 55 J E J Turn-on Switching Energy (Diode) 1310 on2 66 E Turn-off Switching Energy 1300 off THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic UNIT MIN TYP MAX R Junction to Case (IGBT) .64 JC C/W R Junction to Case (DIODE) 1.18 JC W Package Weight gm 5.9 T 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I includes both IGBT and FRED leakages ces 3 See MIL-STD-750 Method 3471. 4 E is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current on1 adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in gure 21, but with a Silicon Carbide diode. 5 E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching on2 loss. (See Figures 21, 22.) 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) off 7 R is external gate resistance, not including R nor gate driver impedance. (MIC4452) G Gint Microsemi Reserves the right to change, without notice, the speci cations and information contained herein. 050-7598 Rev C 7-2009