APT20GF120BRD APT20GF120SRD 1200V 32A Fast IGBT & FRED TO-247 3 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non- D PAK Punch Through Technology the Fast IGBT combined with an APT free- wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness G C and fast switching speed. C E G E Low Forward Voltage Drop High Freq. Switching to 20KHz C Low Tail Current Ultra Low Leakage Current RBSOA and SCSOA Rated G Ultrafast Soft Recovery Antiparallel Diode E MAXIMUM RATINGS (IGBT) All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT20GF120BRD/SRD UNIT V Collector-Emitter Voltage 1200 CES V 1200 Collector-Gate Voltage (R = 20K ) Volts CGR GE V Gate-Emitter Voltage 20 GE 3 I Continuous Collector Current T = 25C 32 C1 C I 20 C2 Continuous Collector Current T = 105C C Amps 1 I Pulsed Collector Current T = 90C CM 64 C I LM RBSOA Clamped Inductive Load Current R = 11 T = 125C 40 g C P D Total Power Dissipation 200 Watts T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. T 300 L STATIC ELECTRICAL CHARACTERISTICS (IGBT) Symbol UNIT Characteristic / Test Conditions MIN TYP MAX V (TH) GE Gate Threshold Voltage (V = V , I = 600A, T = 25C) 4.5 5.5 6.5 CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 15A, T = 25C) 2.7 3.2 GE C j V (ON) CE 3.3 3.9 Collector-Emitter On Voltage (V = 15V, I = 15A, T = 125C) GE C j 1 Collector Cut-off Current (V = V , V = 0V, T = 25C) CE CES GE j I CES mA Collector Cut-off Current (V = V , V = 0V, T = 125C) 6 CE CES GE j I GES 100 nA Gate-Emitter Leakage Current (V = 20V, V = 0V) GE CE CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS (IGBT) APT20GF120BRD/SRD Symbol Characteristic Test Conditions MIN TYP MAX UNIT Capacitance C Input Capacitance 1050 1210 ies V = 0V GE 100 150 C Output Capacitance pF oes V = 25V CE C Reverse Transfer Capacitance 63 110 f = 1 MHz res 2 Gate Charge 95 140 Q Total Gate Charge g V = 15V GE Q Gate-Emitter Charge 13 20 nC ge V = 0.5V CC CES Q Gate-Collector Mille) Charge 62 90 I = I gc C C2 Resistive Switching (25C) t (on) Turn-on Delay Time 15 30 d V = 15V GE t Rise Time 67 130 r V = 0.8V ns CC CES t (off) Turn-off Delay Time 92 140 d I = I C C2 t Fall Time R = 10 93 190 G f t (on) Turn-on Delay Time 17 34 d t Rise Time 30 60 Inductive Switching (150C) r ns V (Peak) = 0.66V CLAMP CES t (off) Turn-off Delay Time 105 160 d V = 15V GE t Fall Time 71 140 f I = I C C2 R = 10 E Turn-on Switching Energy 1.3 3 on G = +150C T J E Turn-off Switching Energy 1.5 3 mJ off E Total Switching Losses 2.7 5 ts Turn-on Delay Time t (on) 17 30 Inductive Switching (25C) d V (Peak) = 0.66V CLAMP CES Rise Time t 35 70 r V = 15V ns GE Turn-off Delay Time t (off) 93 140 d I = I C C2 Fall Time R = 10 t 70 140 f G T = +25C J E mJ Total Switching Losses 2.4 5 ts gfe Forward Transconductance V = 20V, I = 15A 12 S CE C THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED) UNIT Symbol Characteristic MIN TYP MAX Junction to Case (IGBT) 0.63 R JC Junction to Case (FRED) 0.90 C/W R Junction to Ambient 40 JA 0.22 oz W Package Weight T 6.1 gm 10 lbin Torque Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw 1.1 Nm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 See MIL-STD-750 Method 3471 3 Switching losses include the FRED and IGBT. APT Reserves the right to change, without notice, the specifications and information contained herein. 052-6252 Rev C 4-2003