TO-247 APT54GA60B APT54GA60S 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low E is achieved APT54GA60S off through leading technology silicon design and lifetime control processes. A reduced E - off 3 D PAK V tradeoff results in superior ef ciency compared to other IGBT technologies. Low CE(ON) gate charge and a greatly reduced ratio of C /C provide excellent noise immunity, short res ies delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even APT54GA60B when switching at high frequency. Single die IGBT FEATURES TYPICAL APPLICATIONS Fast switching with low EMI ZVS phase shifted and other full bridge Very Low E for maximum ef ciency Half bridge off Ultra low C for improved noise immunity High power PFC boost res Low conduction loss Welding Low gate charge UPS, solar, and other inverters Increased intrinsic gate resistance for low EMI High frequency, high ef ciency industrial RoHS compliant Absolute Maximum Ratings Symbol Parameter Ratings Unit Collector Emitter Voltage 600 V V ces I Continuous Collector Current T = 25C 96 C1 C A I Continuous Collector Current T = 100C 54 C2 C 1 I Pulsed Collector Current 161 CM 2 V Gate-Emitter Voltage 30 V GE P Total Power Dissipation T = 25C 416 W D C SSOA Switching Safe Operating Area T = 150C 161A 600V J T , T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature for Soldering: 0.063 from Case for 10 Seconds 300 L Static Characteristics T = 25C unless otherwise speci ed J Symbol Parameter Test Conditions Min Typ Max Unit V Collector-Emitter Breakdown Voltage V = 0V, I = 1.0mA 600 BR(CES) GE C T = 25C 2.0 2.5 V = 15V, GE J V V Collector-Emitter On Voltage CE(on) I = 32A T = 125C 1.9 C J V Gate Emitter Threshold Voltage V =V , I = 1mA 3 4.5 6 GE(th) GE CE C V = 600V, T = 25C 250 J CE I Zero Gate Voltage Collector Current A CES V = 0V T = 125C 2500 GE J I Gate-Emitter Leakage Current V = 30V 100 nA GES GS Thermal and Mechanical Characteristics Symbol Characteristic Min Typ Max Unit R Junction to Case Thermal Resistance - - .3 C/W JC W Package Weight - 5.9 - g T Torque Mounting Torque (TO-247 Package), 4-40 or M3 screw 10 inlbf Microsemi Website - APT54GA60B S Dynamic Characteristics T = 25C unless otherwise speci ed J Symbol Parameter Test Conditions Min Typ Max Unit C Input Capacitance Capacitance 4130 ies C Output Capacitance 350 V = 0V, V = 25V pF oes GE CE C Reverse Transfer Capacitance 45 f = 1MHz res 3 Q Total Gate Charge Gate Charge 158 g Q Gate-Emitter Charge V = 15V 26 ge GE nC V = 300V CE Q Gate- Collector Charge 52 gc I = 32A C 4 T = 150C, R = 4.7 , V = 15V, J G GE SSOA Switching Safe Operating Area 161 A L= 100uH, V = 600V CE t Turn-On Delay Time Inductive Switching (25C) 17 d(on) t Current Rise Time V = 400V 20 r CC ns t Turn-Off Delay Time V = 15V 112 d(off) GE t Current Fall Time I = 32A 86 f C 4 E Turn-On Switching Energy 534 R = 4.7 on2 G J 6 466 E Turn-Off Switching Energy T = +25C off J t Turn-On Delay Time Inductive Switching (125C) 16 d(on t Current Rise Time V = 400V 21 r CC ns t Turn-Off Delay Time V = 15V 146 d(off) GE t Current Fall Time 145 I = 32A f C 4 E Turn-On Switching Energy 891 R = 4.7 on2 G J 6 E Turn-Off Switching Energy 838 T = +125C off J 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380 s, duty cycle < 2%. 3 See Mil-Std-750 Method 3471 4 R is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) G 5 E is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the on2 clamping diode. 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. off Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 052-6328 Rev E 6 - 2011