About IGBT Transistors

Microchip IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
APT25GP90BG


IGBT Transistors FG, IGBT, 900V, 25A, TO-247, RoHS
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Microchip Availability : 0
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USD 10.528

Multiples of: 1

      417 W   POWER MOS 7®, PT     
APT100GN60B2G


IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Single
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Microchip Availability : 0
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USD 10.8

Multiples of: 1

      625 W   Field Stop     
APT25GN120B2DQ2G


IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi
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USD 11.325

Multiples of: 1

      272 W   Field Stop     
APT35GN120SG


IGBT Transistors FG, IGBT, 1200V, 35A, D3, TO-268, RoHS
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USD 11.326

Multiples of: 1

      379 W   Field Stop     
APT25GP120BDQ1G


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi
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USD 11.6041

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Single1.2 kV3.3 V30 V69 A100 nA  TO - 247 - 3TubeSiThrough Hole417 W- 55 C+ 150 C 
APT75GN60BDQ2G


IGBT Transistors IGBT Fieldstop Low Frequency Single 600 V 75 A TO-247
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USD 11.998

Multiples of: 1

      536 W   Field Stop     
APT40GR120S


IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
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Microchip Availability : 0
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USD 12.0065

Multiples of: 1

         TubeSi     
APT25GR120SSCD10


IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
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USD 12.3351

Multiples of: 1

         TubeSi     
APT80GA60LD40


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Combi
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USD 12.5925

Multiples of: 1

Single600 V2 V30 V143 A100 nA  TO - 264 - 3TubeSiSmd/Smt625 W- 55 C+ 150 C 
APT50GN120B2G


IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Single
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USD 12.6375

Multiples of: 1

      543 W   Field Stop     
APT75GN60SDQ2G


IGBT Transistors IGBT Fieldstop Low Frequency Combi 600 V 75 A TO-268
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USD 12.642

Multiples of: 1

      536 W   Field Stop     
APT68GA60LD40


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Combi
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USD 12.7875

Multiples of: 1

      520 W   POWER MOS 8®, PT     
APT30GT60BRDG


IGBT Transistors FG IGBT-COMBI 600V 30A TO-247 RoHS
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Microchip Availability : 0
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USD 13.296

Multiples of: 1

         Tube      
APT68GA60B2D40


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Combi
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USD 13.356

Multiples of: 1

      520 W   POWER MOS 8®, PT     
APT64GA90LD30


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Combi
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USD 13.55

Multiples of: 1

Single900 V2.5 V30 V117 A100 nA  TO - 264 - 3TubeSiThrough Hole500 W- 55 C+ 150 C 
APT64GA90B2D30


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Combi
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Microchip Availability : 0
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USD 13.7875

Multiples of: 1

      500 W   POWER MOS 8®, PT     
APT50GP60BG


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single
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Microchip Availability : 0
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USD 13.9286

Multiples of: 1

      625 W   POWER MOS 7®, PT     
APT40GR120B2SCD10


IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
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Microchip Availability : 0
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USD 14.0483

Multiples of: 1

         TubeSi     
APT70GR120L


IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
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Microchip Availability : 0
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USD 14.1335

Multiples of: 1

      961 W   NPT, POWER MOS 8®     
APT80GA90S


IGBT Transistors FG, IGBT, 900V, TO-268
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USD 14.14

Multiples of: 1

      625 W   POWER MOS 8®, PT     
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