APT50GP60B APT50GP60S 600V POWER MOS 7 IGBT TO-247 3 D PAK The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency G C C E switchmode power supplies. G E Low Conduction Loss 200 kHz operation 400V, 26A C Low Gate Charge 100 kHz operation 400V, 41A Ultrafast Tail Current shutoff SSOA rated G E MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter UNIT APT50GP60B S V Collector-Emitter Voltage 600 CES V Gate-Emitter Voltage 20 Volts GE 30 V Gate-Emitter Voltage Transient GEM 7 I 100 Continuous Collector Current T = 25C C1 C I Amps Continuous Collector Current T = 110C 72 C2 C 1 I Pulsed Collector Current T = 150C 190 CM C SSOA Safe Operating Area T = 150C 190A 600V J P 625 Watts Total Power Dissipation D T ,T -55 to 150 Operating and Storage Junction Temperature Range J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Collector-Emitter Breakdown Voltage (V = 0V, I = 500A) 600 CES GE C V Gate Threshold Voltage (V = V , I = 1mA, T = 25C) 3 4.5 6 GE(TH) CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 50A, T = 25C) GE C j 2.2 2.7 V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 50A, T = 125C) 2.1 GE C j 2 Collector Cut-off Current (V = 600V, V = 0V, T = 25C) 500 CE GE j I A CES 2 Collector Cut-off Current (V = 600V, V = 0V, T = 125C) 2500 CE GE j Gate-Emitter Leakage Current (V = 20V) nA I 100 GE GES CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - APT50GP60B S DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions UNIT MIN TYP MAX C Input Capacitance 5700 Capacitance ies C Output Capacitance V = 0V, V = 25V 465 pF oes GE CE f = 1 MHz C Reverse Transfer Capacitance 30 res V Gate-to-Emitter Plateau Voltage 7.5 V GEP Gate Charge 3 V = 15V Q Total Gate Charge GE 165 g V = 300V Q nC Gate-Emitter Charge CE 40 ge I = 50A C Q Gate-Collector Mille) Charge 50 gc SSOA Safe Operating Area T = 150C, R = 5, V = 190 A J G GE 15V, L = 100H,V = 600V CE t 19 Turn-on Delay Time Inductive Switching (25C) d(on) V = 400V CC t Current Rise Time 36 r ns V = 15V GE t Turn-off Delay Time 83 d(off) I = 50A C t 60 Current Fall Time f R = 5 G 4 E Turn-on Switching Energy 465 on1 T = +25C J 5 E Turn-on Switching Energy (Diode) 837 J on2 6 E Turn-off Switching Energy 637 off t Turn-on Delay Time Inductive Switching (125C) 19 d(on) V = 400V CC t Current Rise Time 36 r ns V = 15V GE t Turn-off Delay Time 116 d(off) I = 50A C t 86 Current Fall Time f R = 5 G 4 E 465 Turn-on Switching Energy on1 T = +125C J 5 E Turn-on Switching Energy (Diode) 1261 on2 J 6 E Turn-off Switching Energy 1058 off THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R .20 Junction to Case (IGBT) JC C/W R Junction to Case (DIODE) N/A JC gm W Package Weight 5.90 T 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I includes both IGBT and FRED leakages ces 3 See MIL-STD-750 Method 3471. 4E is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current on1 adding to the IGBT turn-on loss. (See Figure 24.) 5E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching on2 loss. A Combi device is used for the clamping diode as shown in the E test circuit. (See Figures 21, 22.) on2 6E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) off 7 Continuous current limited by package lead temperature. APT Reserves the right to change, without notice, the specifications and information contained herein. 050-7434 Rev B 2-2004