The APT68GA60B2D40 is a Combi type device which combines both Insulated Gate Bipolar Transistor (IGBT) and Power MOS 8 technology from Microchip. This device offers high performance in ultra-thin and low profile packages, making it ideal for applications requiring high power efficiency such as power VRMs, motor controls, automotive power modules, and inverters. This device offers a wide range of features such as 1,000V breakdown voltage, 150A collector current, a 0.15V turn-on voltage, and a maximum switching frequency of 20 kHz. With a 3rd-generation field stop structure built-in, this device offers low losses and high power efficiency with excellent thermal performance. The APT68GA60B2D40 provides protection features such as overcurrent protection and avalanche immunity, making it suitable for a wide variety of automotive and industrial applications.