TYPICAL PERFORMANCE CURVES APT25GN120B2DQ2(G) 1200V APT25GN120B2DQ2 APT25GN120B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBTs have a very short, low amplitude tail current and low Eoff. The Trench Gate design TM T-Max results in superior V performance. Easy paralleling results from very tight CE(on) parameter distribution and slightly positive V temperature coefcient. Built-in CE(on) gate resistance ensures ultra-reliable operation. Low gate charge simplies gate drive design and minimizes losses. G C E 1200V NPT Field Stop Trench Gate: Low V CE(on) Easy Paralleling C 10s Short Circuit Capability Intergrated Gate Resistor: Low EMI, High Reliability G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specied. C Parameter Symbol APT25GN120B2DQ2(G) UNIT V Collector-Emitter Voltage 1200 CES Volts V Gate-Emitter Voltage 30 GE I Continuous Collector Current T = 25C 67 C1 C I Continuous Collector Current T = 110C 33 Amps C2 C 1 Pulsed Collector Current T = 150C I 75 C CM Switching Safe Operating Area T = 150C 75A 1200V SSOA J P Total Power Dissipation 272 Watts D T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX Units V 1200 Collector-Emitter Breakdown Voltage (V = 0V, I = 150A) (BR)CES GE C V 5 5.8 6.5 Gate Threshold Voltage (V = V , I = 1mA, T = 25C) GE(TH) CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 25A, T = 25C) 1.4 1.7 2.1 GE C j V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 25A, T = 125C) 1.9 GE C j 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 25C) 200 CE GE j I A CES 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 125C) TBD CE GE j I Gate-Emitter Leakage Current (V = 20V) 600 nA GES GE R Intergrated Gate Resistor 8 GINT CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - APT25GN120B2DQ2(G) DYNAMIC CHARACTERISTICS Characteristic Test Conditions Symbol MIN TYP MAX UNIT C Input Capacitance 1800 Capacitance ies C Output Capacitance 105 pF V = 0V, V = 25V oes GE CE C f = 1 MHz Reverse Transfer Capacitance 85 res V Gate-to-Emitter Plateau Voltage Gate Charge 9.5 V GEP 3 V = 15V Q Total Gate Charge 155 GE g V = 600V Q Gate-Emitter Charge 10 nC CE ge I = 25A Q Gate-Collector Mille) Charge C 85 gc 7 T = 150C, R = 4.3 , V = J G GE Switching Safe Operating Area SSOA 75 A 15V, L = 100H,V = 1200V CE V = 960V, V = 15V, CC GE s SCSOA Short Circuit Safe Operating Area 10 7 T = 125C, R = 4.3 J G t Inductive Switching (25C) 22 d(on) Turn-on Delay Time t V = 800V 17 Current Rise Time r CC ns t V = 15V Turn-off Delay Time 280 d(off) GE I = 25A t 135 Current Fall Time C f 7 R = 4.3 4 E G Turn-on Switching Energy TBD on1 T = +25C 5 E J J Turn-on Switching Energy (Diode) 1490 on2 6 E 2150 Turn-off Switching Energy off t Inductive Switching (125C) Turn-on Delay Time 22 d(on) t V = 800V Current Rise Time 17 r CC ns t V = 15V Turn-off Delay Time d(off) 335 GE I = 25A t Current Fall Time C 225 f 7 R = 4.3 4 4 E G TBD Turn-on Switching Energy on1 T = +125C 55 E J 2390 Turn-on Switching Energy (Diode) J on2 66 E 3075 Turn-off Switching Energy off THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic UNIT MIN TYP MAX R Junction to Case (IGBT) .46 JC C/W R Junction to Case (DIODE) .67 JC W Package Weight gm 5.9 T 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I includes both IGBT and FRED leakages ces 3 See MIL-STD-750 Method 3471. 4 E is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current on1 adding to the IGBT turn-on loss. (See Figure 24.) 5 E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching on2 loss. (See Figures 21, 22.) 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) off 7 R is external gate resistance, not including R nor gate driver impedance. (MIC4452) G Gint APT Reserves the right to change, without notice, the specications and information contained herein. 050-7603 Rev B 10-2005