About IGBT Transistors

Stmicroelectronics IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGW30H65FB


IGBT Transistors PTD IGBT & IPM
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STMicroelectronics Availability : 2910
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USD 1.9669

Multiples of: 1

Single650 V1.75 V+/- 20 V30 A250 nA260 W TO - 247 - 3TubeSiThrough Hole260 W- 55 C+ 175 CStgw30h65fb
STGWA25M120DF3


STMicroelectronics IGBT Transistors
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STMicroelectronics Availability : 2886
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USD 3.2383

Multiples of: 1

Single1.2 kV1.85 V20 V50 A250 nA  TO - 247 - 3TubeSiThrough Hole375 W- 55 C+ 175 C900 - 1300V Igbts
STGD19N40LZ


STMicroelectronics IGBT Transistors
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STMicroelectronics Availability : 2425
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USD 1.326

Multiples of: 2500

Single390 V1.35 V16 V 625 uA Aec - Q101DPAK - 3ReelSiSmd/Smt125 W- 55 C+ 175 C300 - 400V Igbts
STGD10NC60KT4


IGBT Transistors IGBT
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STMicroelectronics Availability : 2404
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USD 1.2984

Multiples of: 1

Single600 V +/- 20 V    DPAK - 3Cut TapeSiSmd/Smt - 55 C+ 150 CStgd10nc60kd
STGD7NB60ST4


STMicroelectronics IGBT Transistors N-Ch 600 Volt 7 Amp
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STMicroelectronics Availability : 2350
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USD 1.75

Multiples of: 1

Single600 V1.6 V+/- 20 V15 A+/- 100 nA  TO - 252 - 3ReelSiSmd/Smt55 W- 65 C+ 150 CStgd7nb60s
STGD18N40LZT4


IGBT Transistors EAS 180 mJ-400 V clamped IGBT
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STMicroelectronics Availability : 2318
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USD 1.1742

Multiples of: 1

Single360 V 12 V   Aec - Q101DPAK - 3ReelSiSmd/Smt - 55 C+ 150 CStgd18n40lz
STGD4M65DF2


IGBT Transistors Trench gate field-stop IGBT, M series 650 V, 4 A low loss
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STMicroelectronics Availability : 2162
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USD 0.547

Multiples of: 1

Single650 V1.6 V+/- 20 V8 A+/- 250 uA  DPAK - 3Cut TapeSiSmd/Smt68 W- 55 C+ 175 CStgd4m65df2
STGD10NC60KDT4


Transistor: IGBT; 600V; 10A; 62W; DPAK
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STMicroelectronics Availability : 2126
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USD 1.3

Multiples of: 1

      62 W         
STGB40V60F


IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
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STMicroelectronics Availability : 1940
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USD 1.7121

Multiples of: 1000

Single600 V1.8 V+/- 20 V80 A250 nA  D2PAKReelSiSmd/Smt283 W- 55 C+ 175 C600 - 650V Igbts
STGB10NC60KT4


IGBT Transistors N-channel MOSFET
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STMicroelectronics Availability : 1881
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USD 1.1641

Multiples of: 1

Single600 V +/- 20 V    D2PAK - 3Reel Smd/Smt - 55 C+ 150 CStgb10nc60k
STGB10NC60KDT4


IGBT Transistors N-channel MOSFET
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STMicroelectronics Availability : 1852
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USD 0.6378

Multiples of: 1

Single600 V +/- 20 V    D2PAK - 3ReelSiSmd/Smt - 55 C+ 150 CStgb10nc60kd
STGP30NC60W


IGBT Transistors N-channel MOSFET
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STMicroelectronics Availability : 1750
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USD 2.0432

Multiples of: 1

Single600 V +/- 20 V    TO - 220 - 3Tube Through Hole - 55 C+ 150 CStgp30nc60w
STGF10NC60SD


IGBT Transistors 10 A-600 V fast IGBT
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STMicroelectronics Availability : 1745
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USD 0.5747

Multiples of: 1

 600 V1.45 V20 V10 A100 nA25 W TO - 220 - 3 FPTube Through Hole   Stgf10nc60sd
STGP7NC60HD


Transistor: IGBT; 600V; 14A; 80W; TO220AB
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STMicroelectronics Availability : 1649
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USD 0.793

Multiples of: 50

      80 W         
STGB18N40LZT4


IGBT Transistors EAS 180 mJ-400 V
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STMicroelectronics Availability : 1035
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USD 0.9222

Multiples of: 1

Single360 V 12 V   Aec - Q101D2PAK - 3ReelSiSmd/Smt - 55 C+ 150 CStgb18n40lz
STGF15H60DF


IGBT Transistors Trench gate H series 600V 15A HiSpd
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STMicroelectronics Availability : 970
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USD 0.9591

Multiples of: 1

Single600 V1.6 V+/- 20 V30 A250 nA30 W TO - 220 - 3 FPTubeSiThrough Hole30 W- 55 C+ 175 CStgf15h60df
STGB6NC60HDT4


IGBT Transistors PowerMESH TM IGBT
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STMicroelectronics Availability : 970
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USD 1.1567

Multiples of: 1

Single600 V2.7 V+/- 20 V 100 nA80 W D2PAK - 3ReelSiSmd/Smt80 W- 55 C+ 150 CStgb6nc60hd
STGB19NC60HDT4


STMicroelectronics IGBT Transistors N Ch 600V 19A
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STMicroelectronics Availability : 970
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USD 1.2996

Multiples of: 1000

Single600 V +/- 20 V    D2PAK - 3ReelSiSmd/Smt - 55 C+ 150 CStgb19nc60hd
STGB40H65FB


IGBT Transistors Trench gate field-stop IGBT HB series 650 V 40 A high speed
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STMicroelectronics Availability : 960
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USD 2.8994

Multiples of: 1

Single650 V1.6 V20 V80 A+/- 250 nA  D2PAK - 3Cut TapeSiSmd/Smt283 W- 55 C+ 175 CStgb40h65fb
STGW40H65FB


IGBT Transistors 650V 40A Trench Gate Field-Stop IGBT
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STMicroelectronics Availability : 23
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USD 2.2519

Multiples of: 1

Single650 V1.6 V20 V80 A250 nA283 W TO - 247 - 3TubeSiThrough Hole283 W- 55 C+ 175 CStgw40h65fb
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