About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKW08N120CS7XKSA1


IGBT Transistors INDUSTRY 14
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 3
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USD 4.8188
Multiples of: 1

                
APT20GT60BRDQ1G


IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency Combi
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Microchip Availability : 3
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USD 5.975
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         TubeSi     
APT75GN60LDQ3G


IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi
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Microchip Availability : 3
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USD 10.9595
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Single600 V1.45 V30 V155 A600 nA536 W TO - 264 - 3TubeSiThrough Hole536 W- 55 C+ 175 C 
IKY75N120CH3XKSA1


IGBT Transistors INDUSTRY 14
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 3
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USD 23.4997
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Single1200 V2 V20 V150 A100 nA  TO 247 - 4 - 2TubeSiThrough Hole938 W- 40 C+ 175 C 
NTE3322


Transistor: IGBT; 900V; 60A; 170W; TO3P
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NTE Availability : 3
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USD 32.526
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      170 W         
LEGM75BF120L5H


- IGBTs ROHS
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Leading Energy Availability : 3
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USD 51.1946
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LEGM300BH120L2K


- IGBTs ROHS
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Leading Energy Availability : 3
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USD 52.6908
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MG300HF12MRC2


- IGBTs ROHS
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Yangjie Availability : 3
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USD 77.129
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FF300R17ME4PB11BPSA1


IGBT Transistors MEDIUM POWER ECONO
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Infineon Availability : 3
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USD 332.2819
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         Tray      
NCE15TD60B


TO-220 IGBTs ROHS
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NCE Power Availability : 2
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USD 0.7147
Multiples of: 1

                
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