About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
NCE30TD60BT


TO-247-3 IGBTs ROHS
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USD 1.9408

Multiples of: 1

                
STGW30V60F


STMicroelectronics IGBT Transistors 600V 30A Hi Spd TrenchGate FieldStop
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STMicroelectronics Availability : 0
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USD 1.9447

Multiples of: 1

Single600 V1.85 V20 V60 A250 nA  TO - 247 - 3TubeSiThrough Hole260 W- 55 C+ 175 C600 - 650V Igbts
STGP40V60F


STMicroelectronics IGBT Transistors 600V 40A Trench Gate 1.8V Vce IGBT
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STMicroelectronics Availability : 0
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USD 1.95

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Single600 V2.35 V+/- 20 V80 A   TO - 220 - 3Tube Through Hole283 W- 55 C+ 175 C600 - 650V Igbts
STGWA40IH65DF


IGBT Transistors Trench gate field-stop 650 V, 40 A, soft-switching IH series IGBT in a TO-247 long leads package
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STMicroelectronics Availability : 0
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USD 1.9611

Multiples of: 1

Single650 V1.5 V20 V80 A250 nA  TO - 247 - 3 SiThrough Hole238 W- 55 C+ 175 CStgwa40ih65df
IRGB10B60KDPBF


IGBT Transistors 600V UltraFast 10-30kHz
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Infineon Availability : 0
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USD 1.963

Multiples of: 1

Single600 V2.2 V+/- 20 V22 A100 nA104 W TO - 220 - 3TubeSiThrough Hole156 W- 55 C+ 150 C 
IRGSL15B60KDPBF


IGBT Transistors IGBT DISCRETES
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Infineon Availability : 0
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USD 1.963

Multiples of: 1

Single600 V2.2 V+/- 20 V31 A   TO - 262 - 3TubeSiThrough Hole139 W- 55 C+ 150 C 
FGAF20N60SMD


Fairchild Semiconductor IGBT Transistors 600 V 40 A 62.5 W
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ON Semiconductor Availability : 0
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USD 1.9695

Multiples of: 1

 600 V1.9 V20 V40 A400 nA  TO - 3PFTubeSiThrough Hole62.5 W- 55 C+ 175 CFgaf20n60
AIGB30N65H5ATMA1


IGBT Transistors DISCRETE SWITCHES
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Infineon Availability : 0
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USD 1.9723

Multiples of: 1

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IXGP48N60C3


IGBT Transistors 75Amps 600V
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IXYS Availability : 0
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USD 1.9767

Multiples of: 1

Single600 V2.3 V20 V75 A100 nA  TO - 220 - 3TubeSiThrough Hole300 W- 55 C+ 150 CIxgp48n60
FGH20N60SFDTU_F085


Fairchild Semiconductor IGBT Transistors N-Ch 20A 600V FS IGBT
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ON Semiconductor Availability : 0
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USD 1.9786

Multiples of: 1

Single600 V2.2 V+/- 20 V40 A+/- 400 nA  TO - 247 - 3TubeSicThrough Hole165 W- 55 C+ 150 CFgh20n60sf_F085
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