About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXYP8N90C3


IGBT Transistors XPT 900V IGBT GenX3 XPT IGBT
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IXYS Availability : 0
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USD 2.2109

Multiples of: 1

Single900 V2.15 V30 V20 A100 nA  TO - 220 - 3TubeSiThrough Hole125 W- 55 C+ 175 CIxyp8n90
STGW20H65FB


STMicroelectronics IGBT Transistors
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STMicroelectronics Availability : 0
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USD 2.2118

Multiples of: 1

Single650 V1.55 V20 V40 A250 nA  TO - 247 - 3TubeSiThrough Hole168 W- 55 C+ 175 C600 - 650V Igbts
RJH60F3DPQ-A0#T0


IGBT Transistors IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Renesas Availability : 0
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USD 2.2188

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         TubeSi     
STGW45HF60WDI


IGBT Transistors 45A 600V Ultra Fast IGBT
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STMicroelectronics Availability : 0
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USD 2.2262

Multiples of: 600

  1.9 V20 V70 A100 nA250 W TO - 247TubeSiThrough Hole250 W  Stgw45hf60wdi
IRGI4086PBF


IGBT Transistors 300V Plasma Display Panel
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Infineon Availability : 0
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USD 2.2264

Multiples of: 1

Single300 V1.55 V+/- 30 V25 A 43 W TO - 220 - 3 FPTubeSiThrough Hole43 W- 40 C  
STGW30N120KD


IGBT Transistors 30 A - 1200 V Rugged IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics Availability : 0
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USD 2.2308

Multiples of: 600

Single1200 V +/- 25 V    TO - 247 - 3Tube Through Hole - 55 C+ 125 CStgw30n120kd
HGTG20N60A4D


Transistor: IGBT; 600V; 40A; 190W; TO247
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ON Semiconductor Availability : 0
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USD 2.2366

Multiples of: 1

                
IRG4IBC20KDPBF


Transistor: IGBT; 600V; 11.5A; 34W; TO220AB
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Infineon Availability : 0
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USD 2.2377

Multiples of: 1

Single600 V2.8 V+/- 20 V11.5 A 34 W TO - 220 - 3 FPTubeSiThrough Hole34 W- 55 C  
IRG4PC40FPBF


Transistor: IGBT; 600V; 49A; 160W; TO247-3
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Infineon Availability : 0
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USD 2.2442

Multiples of: 12

Single600 V1.7 V+/- 20 V49 A100 nA160 W TO - 247TubeSiThrough Hole160 W- 55 C+ 150 C 
SGH30N60RUFDTU


Trans IGBT Chip N-CH 600V 48A 3-Pin(3+Tab) TO-3PN Rail
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ON Semiconductor Availability : 0
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USD 2.2488

Multiples of: 450

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