About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKB40N65EH5ATMA1


IGBT Transistors 40A 650V TRENCHSTOP 5 fast H5 IGBT copacked with 40A Rapid 1 diode
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 1940
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USD 2.925

Multiples of: 1

Single650 V1.65 V20 V74 A100 nA  TO - 263 - 3Cut TapeSiSmd/Smt250 W- 40 C+ 175 CTrenchstop 5
STGFW30V60DF


IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
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STMicroelectronics Availability : 0
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USD 2.6285

Multiples of: 1

Single600 V1.85 V+/- 20 V60 A250 nA  TO - 3PFTubeSiThrough Hole58 W- 55 C+ 175 C600 - 650V Igbts
IRG4PH40UD2-EP


IGBT Transistors 1200V UltraFast 5-40kHz
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 2.6424

Multiples of: 25

Single1.2 kV3.1 V+/- 20 V41 A100 nA160 W TO - 247ADTubeSiThrough Hole160 W- 55 C+ 150 C 
STGW50H65DFB2-4


IGBT Transistors Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT
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STMicroelectronics Availability : 0
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USD 2.6606

Multiples of: 1

         Tube      
AOK20B135D1


Transistor: IGBT; 1.35kV; 20A; 170W; TO247; 1.05mJ
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Alpha & Omega Availability : 0
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USD 2.6691

Multiples of: 1

  1.57 V   170 W         
FGA4060ADF


IGBT Transistors 650V FS Gen3 Trench IGBT proliferation
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ON Semiconductor Availability : 0
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USD 2.6727

Multiples of: 163

Single600 V1.8 V30 V80 A400 nA  TO - 3PNBulkSiThrough Hole238 W- 55 C+ 175 CFga4060adf
IXGH36N60A3


IGBT Transistors GenX3 600V IGBTs
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IXYS Availability : 0
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USD 2.6739

Multiples of: 1

        TO - 247AD - 3TubeSi    Ixgh36n60
IRG8P08N120KDPBF


International Rectifier IGBT Transistors 1200V IGBT GEN8
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Infineon Availability : 0
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USD 2.675

Multiples of: 1

Single1200 V1.7 V30 V15 A100 nA89 W TO - 247AC - 3TubeSiThrough Hole89 W- 40 C+ 150 C 
STGWA19NC60HD


IGBT Transistors 19A 600V Very Fast IGBT Ultrafast Diode
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STMicroelectronics Availability : 0
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USD 2.6753

Multiples of: 1

Single600 V1.8 V+/- 20 V52 A+/- 100 nA208 W TO - 247TubeSiThrough Hole208 W- 55 C+ 150 CStgwa19nc60hd
FGH40N60SMD_F085


IGBT Transistors 600V/40A FS Planar IGBT Gen 2
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ON Semiconductor Availability : 0
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USD 2.6855

Multiples of: 3

Single600 V2.1 V+/- 20 V80 A400 nA349 W TO - 247 - 3 SiThrough Hole349 W- 55 C+ 175 CFgh40n60sm_F085
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