About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
KGF40N120KDA-U/P


TO-247-3 IGBTs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

KEC Availability : 0
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USD 3.2427
Multiples of: 1

                
IRG4PH50UPBF


IGBT Transistors 1200V ULTRAFAST 5-40KHZ DSCRETE IGBT
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Infineon Availability : 0
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USD 3.2534
Multiples of: 1

Single1.2 kV3.7 V+/- 20 V45 A 200 W TO - 247Tube Through Hole - 55 C+ 150 C 
NGTB40N60FLWG


IGBT Transistors IGBT 600V 40A FS1 Solar/UPS
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ON Semiconductor Availability : 0
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USD 3.2541
Multiples of: 120

Single600 V1.85 V30 V80 A100 nA257 W TO - 247TubeSiThrough Hole257 W- 55 C+ 150 CNgtb40n60flwg
IRGP4740DPBF


Transistor: IGBT; 650V; 60A; 250W; TO247-3
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Infineon Availability : 0
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USD 3.2589
Multiples of: 138

      250 W         
IRGP4069PBF


Transistor: IGBT; 600V; 76A; 268W; TO247-3
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Infineon Availability : 0
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USD 3.2686
Multiples of: 1

      268 W         
STGW25H120F2


IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
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STMicroelectronics Availability : 0
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USD 3.2716
Multiples of: 30

Single1200 V2.1 V20 V50 A250 nA375 W TO - 247 - 3TubeSiThrough Hole375 W- 55 C+ 175 CStgw25h120f2
NGTB40N120FLWG


IGBT Transistors IGBT, 1200 V, 40 A, FS1 Solar/UPS
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ON Semiconductor Availability : 0
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USD 3.2854
Multiples of: 100

Single1200 V2 V25 V80 A200 nA  TO - 247TubeSiThrough Hole260 W- 55 C+ 150 CNgtb40n120fl
IHW20N120R3


IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body
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Infineon Availability : 0
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USD 3.289
Multiples of: 1

Single1200 V1.48 V6.4 V40 A100 nA310 W TO 247 - 3TubeSiThrough Hole310 W- 40 C+ 175 CIhw20n120
STGB30H60DLLFBAG


IGBT Transistors Automotive-grade trench gate field-stop IGBT HB series 600 V 30 A high speed
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STMicroelectronics Availability : 0
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USD 3.291
Multiples of: 1

Single600 V1.7 V20 V30 A250 uA Aec - Q101D2PAK - 3 SiSmd/Smt260 W- 55 C+ 175 CStgb30h60dllfbag
IRG4PF50WDPBF


IGBT Transistors 900V Warp 20-100kHz
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 3.2974
Multiples of: 1

Single900 V2.7 V+/- 20 V51 A100 nA200 W TO - 247TubeSiThrough Hole200 W- 55 C+ 150 C 
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